Electronic structure of YbGa1.15Si0.85 and YbGa xGe2-x probed by resonant x-ray emission and photoelectron spectroscopies

Hitoshi Yamaoka, Ignace Jarrige, Naohito Tsujii, Motoharu Imai, Jung Fu Lin, Masaharu Matsunami, Ritsuko Eguchi, Masashi Arita, Kenya Shimada, Hirofumi Namatame, Masaki Taniguchi, Munetaka Taguchi, Yasunori Senba, Haruhiko Ohashi, Nozomu Hiraoka, Hirofumi Ishii, Ku Ding Tsuei

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


We performed an x-ray spectroscopic study combining resonant x-ray emission spectroscopy (RXES) and photoelectron spectroscopy on the superconducting ternary silicide YbGa1.15Si0.85 and nonsuperconducting ternary germanide YbGaxGe2-x (x=1.0 and 1.1). The Yb valence for all three compounds is found to be about 2.3. In YbGa 1.15Si0.85 no temperature dependence of the Yb valence is observed in the RXES spectra in the temperature range of 7-300 K, while the valence shows a drastic increase under pressure from the Yb2+ state partially including itinerant electrons to the localized Yb3+ state. Differences are observed in the valence-band spectra of the photoelectron spectroscopy between YbGa1.15Si0.85 and YbGa xGe2-x, which may be attributed to the difference of crystal structure. We conclude that both the crystal structure of the planar GaSi layer in YbGa1.15Si0.85 and the resultant electronic structure may have a crucial role in the occurrence of superconductivity.

Original languageEnglish
Article number104525
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number10
Publication statusPublished - Mar 31 2011

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


Dive into the research topics of 'Electronic structure of YbGa1.15Si0.85 and YbGa xGe2-x probed by resonant x-ray emission and photoelectron spectroscopies'. Together they form a unique fingerprint.

Cite this