Electronically controlled motion of hydrogen in silicon

Y. Kamiura, K. Fukuda, Y. Yamashita, T. Ishiyama

Research output: Contribution to journalArticlepeer-review


We report on the quantitative study of charge-state-dependent local motion of hydrogen around carbon in Si, which was directly probed by measuring the recovery of stress-induced alignment of a hydrogen-carbon complex by means of deep-level transient spectroscopy under uniaxial stress. We have found that hydrogen jumps from a bond-centered site between C and Si atoms to another with an activation energy of 1.33 eV and a frequency factor of (formula presented) in the electron-empty charge state while hydrogen jumps much faster in the electron-occupied charge state with a lower activation energy of 0.55 eV and a smaller frequency factor of (formula presented) We have concluded that the hydrogen-carbon complex captures an electron from the conduction band at its gap state with antibonding character, lowering the barrier and frequency factor for hydrogen motion in the electron-occupied charge state.

Original languageEnglish
Pages (from-to)1-4
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number11
Publication statusPublished - Jan 1 2002

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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