Electronically induced instability of a hydrogen-carbon complex in silicon and its dissociation mechanism

Yoichi Kamiura, Masao Hayashi, Yoshihide Nishiyama, Shigeki Ohyama, Yoshifumi Yamashita

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)


We studied, by deep-level transient spectroscopy (DLTS), the dissociation mechanism of a hydrogen-carbon (H-C) complex, which has a donor level at Ec - 0.15 eV and acts as an electron trap in crystalline silicon. On the basis of our results and a previously proposed atomic model of the H-C complex, in which the hydrogen atom resides inside a silicon-carbon bond, we have proposed the following dissociation mechanism. The complex is stable in the positive charge state, and to dissociate it needs a hydrogen jump with an activation energy of 1.3 eV to break the bond with carbon and silicon. The complex becomes neutral by capturing an electron from the conduction band or accepting an electron directly from the valence band under electronic excitation, and is consequently dissociated at an activation energy of 0.5 eV due to the loss of binding. Strong evidence for the existence of the negative charge state of hydrogen in crystalline silicon is also presented.

Original languageEnglish
Pages (from-to)6579-6590
Number of pages12
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number11
Publication statusPublished - Nov 1997


  • Carbon
  • DLTS
  • Defect
  • Dissociation
  • Hydrogen
  • Photoexcitation
  • Silicon
  • Stability

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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