Enhancement of photoluminescence at 1.54 μm from Er in strained Si and SiGe

T. Ishiyama, S. Yoneyama, Y. Yamashita, Y. Kamiura, T. Date, T. Hasegawa, K. Inoue, K. Okuno

Research output: Contribution to journalConference articlepeer-review

7 Citations (Scopus)


We studied on the photoluminescence (PL) properties of Er in tensile-strained Si on a SiGe layer (Si:Er:O/SiGe) and compressively strained SiGe on a Si layer (SiGe:Er:O/Si) grown by molecular beam epitaxy (MBE). Er-related luminescence was observed around 1.54 μm in both tensile- and compressively strained samples. The PL intensities of strained Si:Er:O/SiGe and SiGe:Er:O/Si samples were much stronger than those of unstrained Si:Er:O/Si samples. Moreover, intensive luminescence was observed in strained samples with low Er concentrations far below 1018 cm-3. The PL spectra of Si:Er:O/SiGe samples were broader than those of unstrained Si:Er:O/Si samples. On the other hand, no significant differences in the width between SiGe:Er:O/Si and unstrained samples were observed. These differences in the PL intensity between strained and unstrained samples strongly suggest that the optical activation of Er in Si and SiGe can be enhanced by the presence of strain.

Original languageEnglish
Pages (from-to)122-125
Number of pages4
JournalPhysica B: Condensed Matter
Issue number1
Publication statusPublished - Apr 1 2006
EventProceedings of the 23rd International Conference on Defects in Semiconductors -
Duration: Jul 24 2005Jul 29 2005


  • Erbium
  • Photoluminescence
  • Silicon
  • Strain

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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