Epitaxial strain effects on the metal-insulator transition in V 2O3 thin films

Shigeki Yonezawa, Yuji Muraoka, Yutaka Ueda, Zenji Hiroi

Research output: Contribution to journalArticlepeer-review

44 Citations (Scopus)


Effects of epitaxial stress on the metal-insulator transition of V 2O3 have been studied for in the form of epitaxial thin films grown on α-Al2O3 (0001) and LiTaO3 (0001) substrates. A metallic phase is stabilized down to 2 K in the V 2O3 thin film on α-Al2O3 (0001), where the a-axis is compressed by 4% owing to large epitaxial stress. On the other hand, the transition temperature TMI is raised by 20 K from the value of 170 K in bulk samples in the film on LiTaO3 (0001), where the a-axis is expanded. These results suggest an intimate relationship between the a-axis length and TMI in V2O3. The conductivity of the metallic ultrathin films shows logarithmic temperature dependence below 20 K, probably due to the Anderson localization in two-dimensional systems.

Original languageEnglish
Pages (from-to)245-248
Number of pages4
JournalSolid State Communications
Issue number4
Publication statusPublished - Jan 2004
Externally publishedYes


  • A. Thin film
  • B. Epitaxy
  • D. Anderson localization
  • E. Strain

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry


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