Epitaxial strain effects on the metal-insulator transition in V 2O3 thin films

Shigeki Yonezawa; Yuji Muraoka; Yutaka Ueda; Zenji Hiroi

doi:10.1016/j.ssc.2003.10.024

Epitaxial strain effects on the metal-insulator transition in V ₂O₃ thin films

Shigeki Yonezawa, Yuji Muraoka, Yutaka Ueda, Zenji Hiroi

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

Effects of epitaxial stress on the metal-insulator transition of V ₂O₃ have been studied for in the form of epitaxial thin films grown on α-Al₂O₃ (0001) and LiTaO₃ (0001) substrates. A metallic phase is stabilized down to 2 K in the V ₂O₃ thin film on α-Al₂O₃ (0001), where the a-axis is compressed by 4% owing to large epitaxial stress. On the other hand, the transition temperature T_MI is raised by 20 K from the value of 170 K in bulk samples in the film on LiTaO₃ (0001), where the a-axis is expanded. These results suggest an intimate relationship between the a-axis length and T_MI in V₂O₃. The conductivity of the metallic ultrathin films shows logarithmic temperature dependence below 20 K, probably due to the Anderson localization in two-dimensional systems.

Original language	English
Pages (from-to)	245-248
Number of pages	4
Journal	Solid State Communications
Volume	129
Issue number	4
DOIs	https://doi.org/10.1016/j.ssc.2003.10.024
Publication status	Published - Jan 2004
Externally published	Yes

Keywords

A. Thin film
B. Epitaxy
D. Anderson localization
E. Strain

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

Access to Document

10.1016/j.ssc.2003.10.024

Cite this

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title = "Epitaxial strain effects on the metal-insulator transition in V 2O3 thin films",

abstract = "Effects of epitaxial stress on the metal-insulator transition of V 2O3 have been studied for in the form of epitaxial thin films grown on α-Al2O3 (0001) and LiTaO3 (0001) substrates. A metallic phase is stabilized down to 2 K in the V 2O3 thin film on α-Al2O3 (0001), where the a-axis is compressed by 4% owing to large epitaxial stress. On the other hand, the transition temperature TMI is raised by 20 K from the value of 170 K in bulk samples in the film on LiTaO3 (0001), where the a-axis is expanded. These results suggest an intimate relationship between the a-axis length and TMI in V2O3. The conductivity of the metallic ultrathin films shows logarithmic temperature dependence below 20 K, probably due to the Anderson localization in two-dimensional systems.",

keywords = "A. Thin film, B. Epitaxy, D. Anderson localization, E. Strain",

author = "Shigeki Yonezawa and Yuji Muraoka and Yutaka Ueda and Zenji Hiroi",

note = "Funding Information: We thank Toshio Takahashi for the use of a four-circle X-ray diffractometer. This research was supported by a Grant-in-Aid for Scientific Research on Property Areas (A) given by The Ministry of Education, Culture, Sports, Science and Technology, Japan.",

year = "2004",

month = jan,

doi = "10.1016/j.ssc.2003.10.024",

language = "English",

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journal = "Solid State Communications",

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T1 - Epitaxial strain effects on the metal-insulator transition in V 2O3 thin films

AU - Yonezawa, Shigeki

AU - Muraoka, Yuji

AU - Ueda, Yutaka

AU - Hiroi, Zenji

N1 - Funding Information: We thank Toshio Takahashi for the use of a four-circle X-ray diffractometer. This research was supported by a Grant-in-Aid for Scientific Research on Property Areas (A) given by The Ministry of Education, Culture, Sports, Science and Technology, Japan.

PY - 2004/1

Y1 - 2004/1

N2 - Effects of epitaxial stress on the metal-insulator transition of V 2O3 have been studied for in the form of epitaxial thin films grown on α-Al2O3 (0001) and LiTaO3 (0001) substrates. A metallic phase is stabilized down to 2 K in the V 2O3 thin film on α-Al2O3 (0001), where the a-axis is compressed by 4% owing to large epitaxial stress. On the other hand, the transition temperature TMI is raised by 20 K from the value of 170 K in bulk samples in the film on LiTaO3 (0001), where the a-axis is expanded. These results suggest an intimate relationship between the a-axis length and TMI in V2O3. The conductivity of the metallic ultrathin films shows logarithmic temperature dependence below 20 K, probably due to the Anderson localization in two-dimensional systems.

AB - Effects of epitaxial stress on the metal-insulator transition of V 2O3 have been studied for in the form of epitaxial thin films grown on α-Al2O3 (0001) and LiTaO3 (0001) substrates. A metallic phase is stabilized down to 2 K in the V 2O3 thin film on α-Al2O3 (0001), where the a-axis is compressed by 4% owing to large epitaxial stress. On the other hand, the transition temperature TMI is raised by 20 K from the value of 170 K in bulk samples in the film on LiTaO3 (0001), where the a-axis is expanded. These results suggest an intimate relationship between the a-axis length and TMI in V2O3. The conductivity of the metallic ultrathin films shows logarithmic temperature dependence below 20 K, probably due to the Anderson localization in two-dimensional systems.

KW - A. Thin film

KW - B. Epitaxy

KW - D. Anderson localization

KW - E. Strain

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