Evaluation of OKI SOI technology

Y. Ikegami; Y. Arai; K. Hara; M. Hazumi; H. Ikeda; H. Ishino; T. Kohriki; H. Miyake; A. Mochizuki; S. Terada; T. Tsuboyama; Y. Unno

doi:10.1016/j.nima.2007.05.272

Evaluation of OKI SOI technology

Y. Ikegami, Y. Arai, K. Hara, M. Hazumi, H. Ikeda, H. Ishino, T. Kohriki, H. Miyake, A. Mochizuki, S. Terada, T. Tsuboyama, Y. Unno

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The silicon-on-insulator (SOI) CMOS technology has a number of advantages over the standard bulk CMOS technology, such as no latch-up effect, high speed and low power. The fully depleted SOI (FD-SOI) technology provided by OKI Electric Industry Co., Ltd. is realizing the full features of the advantages with lowest junction capacitance. Test element group (TEG) structures of transistors were fabricated and irradiated with protons. The first results are presented.

Original language	English
Pages (from-to)	706-711
Number of pages	6
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	579
Issue number	2 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.nima.2007.05.272
Publication status	Published - Sept 1 2007
Externally published	Yes

Keywords

CMOS
FET
Radiation damage
SOI

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

Access to Document

10.1016/j.nima.2007.05.272

Cite this

Ikegami, Y., Arai, Y., Hara, K., Hazumi, M., Ikeda, H., Ishino, H., Kohriki, T., Miyake, H., Mochizuki, A., Terada, S., Tsuboyama, T., & Unno, Y. (2007). Evaluation of OKI SOI technology. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 579(2 SPEC. ISS.), 706-711. https://doi.org/10.1016/j.nima.2007.05.272

Ikegami, Y, Arai, Y, Hara, K, Hazumi, M, Ikeda, H, Ishino, H, Kohriki, T, Miyake, H, Mochizuki, A, Terada, S, Tsuboyama, T & Unno, Y 2007, 'Evaluation of OKI SOI technology', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 579, no. 2 SPEC. ISS., pp. 706-711. https://doi.org/10.1016/j.nima.2007.05.272

@article{d00050b9040c430a8feb5fd98a25bf4f,

title = "Evaluation of OKI SOI technology",

abstract = "The silicon-on-insulator (SOI) CMOS technology has a number of advantages over the standard bulk CMOS technology, such as no latch-up effect, high speed and low power. The fully depleted SOI (FD-SOI) technology provided by OKI Electric Industry Co., Ltd. is realizing the full features of the advantages with lowest junction capacitance. Test element group (TEG) structures of transistors were fabricated and irradiated with protons. The first results are presented.",

keywords = "CMOS, FET, Radiation damage, SOI",

author = "Y. Ikegami and Y. Arai and K. Hara and M. Hazumi and H. Ikeda and H. Ishino and T. Kohriki and H. Miyake and A. Mochizuki and S. Terada and T. Tsuboyama and Y. Unno",

year = "2007",

month = sep,

day = "1",

doi = "10.1016/j.nima.2007.05.272",

language = "English",

volume = "579",

pages = "706--711",

journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

issn = "0168-9002",

publisher = "Elsevier",

number = "2 SPEC. ISS.",

}

TY - JOUR

T1 - Evaluation of OKI SOI technology

AU - Ikegami, Y.

AU - Arai, Y.

AU - Hara, K.

AU - Hazumi, M.

AU - Ikeda, H.

AU - Ishino, H.

AU - Kohriki, T.

AU - Miyake, H.

AU - Mochizuki, A.

AU - Terada, S.

AU - Tsuboyama, T.

AU - Unno, Y.

PY - 2007/9/1

Y1 - 2007/9/1

N2 - The silicon-on-insulator (SOI) CMOS technology has a number of advantages over the standard bulk CMOS technology, such as no latch-up effect, high speed and low power. The fully depleted SOI (FD-SOI) technology provided by OKI Electric Industry Co., Ltd. is realizing the full features of the advantages with lowest junction capacitance. Test element group (TEG) structures of transistors were fabricated and irradiated with protons. The first results are presented.

AB - The silicon-on-insulator (SOI) CMOS technology has a number of advantages over the standard bulk CMOS technology, such as no latch-up effect, high speed and low power. The fully depleted SOI (FD-SOI) technology provided by OKI Electric Industry Co., Ltd. is realizing the full features of the advantages with lowest junction capacitance. Test element group (TEG) structures of transistors were fabricated and irradiated with protons. The first results are presented.

KW - CMOS

KW - FET

KW - Radiation damage

KW - SOI

UR - http://www.scopus.com/inward/record.url?scp=34547753560&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547753560&partnerID=8YFLogxK

U2 - 10.1016/j.nima.2007.05.272

DO - 10.1016/j.nima.2007.05.272

M3 - Article

AN - SCOPUS:34547753560

SN - 0168-9002

VL - 579

SP - 706

EP - 711

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 2 SPEC. ISS.

ER -

Evaluation of OKI SOI technology

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this