Excitonic Bose-Einstein condensation in Ta2 NiSe5 above room temperature

K. Seki; Y. Wakisaka; T. Kaneko; T. Toriyama; T. Konishi; T. Sudayama; N. L. Saini; M. Arita; H. Namatame; M. Taniguchi; N. Katayama; M. Nohara; H. Takagi; T. Mizokawa; Y. Ohta

doi:10.1103/PhysRevB.90.155116

Excitonic Bose-Einstein condensation in Ta2 NiSe5 above room temperature

K. Seki, Y. Wakisaka, T. Kaneko, T. Toriyama, T. Konishi, T. Sudayama, N. L. Saini, M. Arita, H. Namatame, M. Taniguchi, N. Katayama, M. Nohara, H. Takagi, T. Mizokawa, Y. Ohta

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115 Citations (Scopus)

Abstract

We show that finite temperature variational cluster approximation (VCA) calculations on an extended Falicov-Kimball model can reproduce angle-resolved photoemission spectroscopy (ARPES) results on Ta2NiSe5 across a semiconductor-to-semiconductor structural phase transition at 325 K. We demonstrate that the characteristic temperature dependence of the flat-top valence band observed by ARPES is reproduced by the VCA calculation on the realistic model for an excitonic insulator only when the strong excitonic fluctuation is taken into account. The present calculations indicate that Ta2NiSe5 falls in the Bose-Einstein condensation regime of the excitonic insulator state.

Original language	English
Article number	155116
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	90
Issue number	15
DOIs	https://doi.org/10.1103/PhysRevB.90.155116
Publication status	Published - Oct 13 2014

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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Seki, K., Wakisaka, Y., Kaneko, T., Toriyama, T., Konishi, T., Sudayama, T., Saini, N. L., Arita, M., Namatame, H., Taniguchi, M., Katayama, N., Nohara, M., Takagi, H., Mizokawa, T., & Ohta, Y. (2014). Excitonic Bose-Einstein condensation in Ta2 NiSe5 above room temperature. Physical Review B - Condensed Matter and Materials Physics, 90(15), [155116]. https://doi.org/10.1103/PhysRevB.90.155116

Seki, K, Wakisaka, Y, Kaneko, T, Toriyama, T, Konishi, T, Sudayama, T, Saini, NL, Arita, M, Namatame, H, Taniguchi, M, Katayama, N, Nohara, M, Takagi, H, Mizokawa, T & Ohta, Y 2014, 'Excitonic Bose-Einstein condensation in Ta2 NiSe5 above room temperature', Physical Review B - Condensed Matter and Materials Physics, vol. 90, no. 15, 155116. https://doi.org/10.1103/PhysRevB.90.155116

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abstract = "We show that finite temperature variational cluster approximation (VCA) calculations on an extended Falicov-Kimball model can reproduce angle-resolved photoemission spectroscopy (ARPES) results on Ta2NiSe5 across a semiconductor-to-semiconductor structural phase transition at 325 K. We demonstrate that the characteristic temperature dependence of the flat-top valence band observed by ARPES is reproduced by the VCA calculation on the realistic model for an excitonic insulator only when the strong excitonic fluctuation is taken into account. The present calculations indicate that Ta2NiSe5 falls in the Bose-Einstein condensation regime of the excitonic insulator state.",

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AU - Seki, K.

AU - Wakisaka, Y.

AU - Kaneko, T.

AU - Toriyama, T.

AU - Konishi, T.

AU - Sudayama, T.

AU - Saini, N. L.

AU - Arita, M.

AU - Namatame, H.

AU - Taniguchi, M.

AU - Katayama, N.

AU - Nohara, M.

AU - Takagi, H.

AU - Mizokawa, T.

AU - Ohta, Y.

PY - 2014/10/13

Y1 - 2014/10/13

N2 - We show that finite temperature variational cluster approximation (VCA) calculations on an extended Falicov-Kimball model can reproduce angle-resolved photoemission spectroscopy (ARPES) results on Ta2NiSe5 across a semiconductor-to-semiconductor structural phase transition at 325 K. We demonstrate that the characteristic temperature dependence of the flat-top valence band observed by ARPES is reproduced by the VCA calculation on the realistic model for an excitonic insulator only when the strong excitonic fluctuation is taken into account. The present calculations indicate that Ta2NiSe5 falls in the Bose-Einstein condensation regime of the excitonic insulator state.

AB - We show that finite temperature variational cluster approximation (VCA) calculations on an extended Falicov-Kimball model can reproduce angle-resolved photoemission spectroscopy (ARPES) results on Ta2NiSe5 across a semiconductor-to-semiconductor structural phase transition at 325 K. We demonstrate that the characteristic temperature dependence of the flat-top valence band observed by ARPES is reproduced by the VCA calculation on the realistic model for an excitonic insulator only when the strong excitonic fluctuation is taken into account. The present calculations indicate that Ta2NiSe5 falls in the Bose-Einstein condensation regime of the excitonic insulator state.

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Excitonic Bose-Einstein condensation in Ta2 NiSe5 above room temperature

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