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Experimental validation of newly fabricated normally-on GaN high-electron-mobility transistor
Takaharu Ishibashi, Masayuki Okamoto, Eiji Hiraki, Toshihiko Tanaka, Tamotsu Hashizume, Daigo Kikuta, Tetsu Kachi
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
2
Citations
(Scopus)