Experimental Validation of Normally-On GaN HEMT and Its Gate Drive Circuit

Takaharu Ishibashi, Masayuki Okamoto, Eiji Hiraki, Toshihiko Tanaka, Tamotsu Hashizume, Daigo Kikuta, Tetsu Kachi

Research output: Contribution to journalArticlepeer-review

37 Citations (Scopus)


Wide-bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are promising materials for next-generation power devices. We have fabricated a normally on GaN-based high-electron-mobility transistor (GaN HEMT) for power electronic converters. In this paper, the current collapse phenomena, which are distinctive characteristics of GaN devices, are evaluated in detail for several voltages with two switching frequencies. We also evaluate a gate drive circuit that we previously proposed for the normally on GaN HEMT with a single positive voltage source. We construct and test prototype circuits for a boost-type dc-dc converter and a single-phase full-bridge inverter with a gate drive circuit. The problems to be solved for the normally on GaN HEMT, which has a (static) voltage rating of over 600 V, are clarified on the basis of the experimental results.

Original languageEnglish
Article number6954492
Pages (from-to)2415-2422
Number of pages8
JournalIEEE Transactions on Industry Applications
Issue number3
Publication statusPublished - May 1 2015


  • Current collapse phenomena
  • GaN-based high-electron-mobility transistor (GaN HEMT)
  • gate driver
  • normally-on
  • switching characteristics

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering


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