Fabrication and characteristics of C84 fullerene field-effect transistors

Kana Shibata; Yoshihiro Kubozono; Takayoshi Kanbara; Tomoko Hosokawa; Akihiko Fujiwara; Yasuhiro Ito; Hisanori Shinohara

doi:10.1063/1.1695193

Fabrication and characteristics of C₈₄ fullerene field-effect transistors

Kana Shibata, Yoshihiro Kubozono, Takayoshi Kanbara, Tomoko Hosokawa, Akihiko Fujiwara, Yasuhiro Ito, Hisanori Shinohara

Research Institute for Interdisciplinary Science

Research output: Contribution to journal › Article › peer-review

46 Citations (Scopus)

Abstract

The fabrication of higher-fullerene field effect transistors (FET) devices with thin films of C₈₄ was studied. Commercially available SiO ₂/Si(100) wafers were used as substrates after cleaning with acetone, methanol and H₂SO₄/H₂O₂. The thin film of C₈₄ was formed by a thermal deposition under a vacuum of 10^-8 Torr. The channel length and the channel width of the device were 75 and 4000 μm. The results show that the threshold voltage decreases monotonically with increasing temperature up to 320 K.

Original language	English
Pages (from-to)	2572-2574
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	14
DOIs	https://doi.org/10.1063/1.1695193
Publication status	Published - Apr 5 2004

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1695193

Cite this

@article{49deb2059c2f4ffe9a4e659ea378eb51,

title = "Fabrication and characteristics of C84 fullerene field-effect transistors",

abstract = "The fabrication of higher-fullerene field effect transistors (FET) devices with thin films of C84 was studied. Commercially available SiO 2/Si(100) wafers were used as substrates after cleaning with acetone, methanol and H2SO4/H2O2. The thin film of C84 was formed by a thermal deposition under a vacuum of 10-8 Torr. The channel length and the channel width of the device were 75 and 4000 μm. The results show that the threshold voltage decreases monotonically with increasing temperature up to 320 K.",

author = "Kana Shibata and Yoshihiro Kubozono and Takayoshi Kanbara and Tomoko Hosokawa and Akihiko Fujiwara and Yasuhiro Ito and Hisanori Shinohara",

year = "2004",

month = apr,

day = "5",

doi = "10.1063/1.1695193",

language = "English",

volume = "84",

pages = "2572--2574",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "14",

}

TY - JOUR

T1 - Fabrication and characteristics of C84 fullerene field-effect transistors

AU - Shibata, Kana

AU - Kubozono, Yoshihiro

AU - Kanbara, Takayoshi

AU - Hosokawa, Tomoko

AU - Fujiwara, Akihiko

AU - Ito, Yasuhiro

AU - Shinohara, Hisanori

PY - 2004/4/5

Y1 - 2004/4/5

N2 - The fabrication of higher-fullerene field effect transistors (FET) devices with thin films of C84 was studied. Commercially available SiO 2/Si(100) wafers were used as substrates after cleaning with acetone, methanol and H2SO4/H2O2. The thin film of C84 was formed by a thermal deposition under a vacuum of 10-8 Torr. The channel length and the channel width of the device were 75 and 4000 μm. The results show that the threshold voltage decreases monotonically with increasing temperature up to 320 K.

AB - The fabrication of higher-fullerene field effect transistors (FET) devices with thin films of C84 was studied. Commercially available SiO 2/Si(100) wafers were used as substrates after cleaning with acetone, methanol and H2SO4/H2O2. The thin film of C84 was formed by a thermal deposition under a vacuum of 10-8 Torr. The channel length and the channel width of the device were 75 and 4000 μm. The results show that the threshold voltage decreases monotonically with increasing temperature up to 320 K.

UR - http://www.scopus.com/inward/record.url?scp=2342454400&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2342454400&partnerID=8YFLogxK

U2 - 10.1063/1.1695193

DO - 10.1063/1.1695193

M3 - Article

AN - SCOPUS:2342454400

SN - 0003-6951

VL - 84

SP - 2572

EP - 2574

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Fabrication and characteristics of C₈₄ fullerene field-effect transistors

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this