TY - JOUR
T1 - Fabrication and characterization of field-effect transistor device with C2v isomer of Pr@C82
AU - Nagano, Takayuki
AU - Kuwahara, Eiji
AU - Takayanagi, Toshio
AU - Kubozono, Yoshihiro
AU - Fujiwara, Akihiko
N1 - Funding Information:
This work was partly supported by Mitsubishi foundation, and a Grant-in-Aid (15350089) of Ministry of Education, Culture, Sports, Science and Technology, Japan.
PY - 2005/6/30
Y1 - 2005/6/30
N2 - A field-effect transistor (FET) device was fabricated with thin films of C2v isomer of Pr@C82. This device apparently showed n-channel normally on type FET properties, where non-zero current was observed at the gate-source voltage, VGS, of 0 V. Normally off FET properties were observed by subtraction of the non-zero current from the drain current. Thus the normally on properties are ascribed to the high bulk current caused by the small energy gap of ≈0.3 eV. The field-effect mobility for this FET was 1.5 × 10-4 cm2 V-1 s-1 at 320 K, being comparable to those of other endohedral metallofullerene FET devices.
AB - A field-effect transistor (FET) device was fabricated with thin films of C2v isomer of Pr@C82. This device apparently showed n-channel normally on type FET properties, where non-zero current was observed at the gate-source voltage, VGS, of 0 V. Normally off FET properties were observed by subtraction of the non-zero current from the drain current. Thus the normally on properties are ascribed to the high bulk current caused by the small energy gap of ≈0.3 eV. The field-effect mobility for this FET was 1.5 × 10-4 cm2 V-1 s-1 at 320 K, being comparable to those of other endohedral metallofullerene FET devices.
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U2 - 10.1016/j.cplett.2005.05.019
DO - 10.1016/j.cplett.2005.05.019
M3 - Article
AN - SCOPUS:20444480236
SN - 0009-2614
VL - 409
SP - 187
EP - 191
JO - Chemical Physics Letters
JF - Chemical Physics Letters
IS - 4-6
ER -