Fabrication of ambipolar field-effect transistor device with heterostructure of C60 and pentacene

Eiji Kuwahara; Yoshihiro Kubozono; Tomoko Hosokawa; Takayuki Nagano; Kosuke Masunari; Akihiko Fujiwara

doi:10.1063/1.1818336

Fabrication of ambipolar field-effect transistor device with heterostructure of C₆₀ and pentacene

Eiji Kuwahara, Yoshihiro Kubozono, Tomoko Hosokawa, Takayuki Nagano, Kosuke Masunari, Akihiko Fujiwara

Research Institute for Interdisciplinary Science

Research output: Contribution to journal › Article › peer-review

73 Citations (Scopus)

Abstract

Ambipolar field-effect transistor (FET) device was fabricated with heterostructure of thin films of C₆₀ and pentacene. Three types of device structures in the C₆₀/pentacene heterostructure FET device were studied in order to realize the best ambipolar properties. In the middle-contact type FET device of ₆₀ and pentacene, the mobility μ. in p-channel operation was estimated to be 6.8 cc 10^-2 cm ² V^-1 s^-1, while the μ, in n-channel operation was 1.3 × 10^-3 cm² V^-1 s ^-1. This ambipolar FET device is available for a practical building-block to form CMOS integrated circuits with low-power consumption, good-noise margins, and ease of design.

Original language	English
Pages (from-to)	4765-4767
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	20
DOIs	https://doi.org/10.1063/1.1818336
Publication status	Published - Nov 15 2004

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1818336

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title = "Fabrication of ambipolar field-effect transistor device with heterostructure of C60 and pentacene",

abstract = "Ambipolar field-effect transistor (FET) device was fabricated with heterostructure of thin films of C60 and pentacene. Three types of device structures in the C60/pentacene heterostructure FET device were studied in order to realize the best ambipolar properties. In the middle-contact type FET device of 60 and pentacene, the mobility μ. in p-channel operation was estimated to be 6.8 cc 10-2 cm 2 V-1 s-1, while the μ, in n-channel operation was 1.3 × 10-3 cm2 V-1 s -1. This ambipolar FET device is available for a practical building-block to form CMOS integrated circuits with low-power consumption, good-noise margins, and ease of design.",

author = "Eiji Kuwahara and Yoshihiro Kubozono and Tomoko Hosokawa and Takayuki Nagano and Kosuke Masunari and Akihiko Fujiwara",

note = "Funding Information: This work was supported in part by a Grant-in-Aid (15350089) from the Ministry of Education, Science, Sports and Culture of Japan, and by Mitsubishi foundation.",

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doi = "10.1063/1.1818336",

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T1 - Fabrication of ambipolar field-effect transistor device with heterostructure of C60 and pentacene

AU - Kuwahara, Eiji

AU - Kubozono, Yoshihiro

AU - Hosokawa, Tomoko

AU - Nagano, Takayuki

AU - Masunari, Kosuke

AU - Fujiwara, Akihiko

N1 - Funding Information: This work was supported in part by a Grant-in-Aid (15350089) from the Ministry of Education, Science, Sports and Culture of Japan, and by Mitsubishi foundation.

PY - 2004/11/15

Y1 - 2004/11/15

N2 - Ambipolar field-effect transistor (FET) device was fabricated with heterostructure of thin films of C60 and pentacene. Three types of device structures in the C60/pentacene heterostructure FET device were studied in order to realize the best ambipolar properties. In the middle-contact type FET device of 60 and pentacene, the mobility μ. in p-channel operation was estimated to be 6.8 cc 10-2 cm 2 V-1 s-1, while the μ, in n-channel operation was 1.3 × 10-3 cm2 V-1 s -1. This ambipolar FET device is available for a practical building-block to form CMOS integrated circuits with low-power consumption, good-noise margins, and ease of design.

AB - Ambipolar field-effect transistor (FET) device was fabricated with heterostructure of thin films of C60 and pentacene. Three types of device structures in the C60/pentacene heterostructure FET device were studied in order to realize the best ambipolar properties. In the middle-contact type FET device of 60 and pentacene, the mobility μ. in p-channel operation was estimated to be 6.8 cc 10-2 cm 2 V-1 s-1, while the μ, in n-channel operation was 1.3 × 10-3 cm2 V-1 s -1. This ambipolar FET device is available for a practical building-block to form CMOS integrated circuits with low-power consumption, good-noise margins, and ease of design.

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Fabrication of ambipolar field-effect transistor device with heterostructure of C₆₀ and pentacene

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