Ambipolar field-effect transistor (FET) device was fabricated with heterostructure of thin films of C60 and pentacene. Three types of device structures in the C60/pentacene heterostructure FET device were studied in order to realize the best ambipolar properties. In the middle-contact type FET device of 60 and pentacene, the mobility μ. in p-channel operation was estimated to be 6.8 cc 10-2 cm 2 V-1 s-1, while the μ, in n-channel operation was 1.3 × 10-3 cm2 V-1 s -1. This ambipolar FET device is available for a practical building-block to form CMOS integrated circuits with low-power consumption, good-noise margins, and ease of design.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - Nov 15 2004|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)