Fabrication of field-effect transistor device with higher fullerene, C88

Takayuki Nagano; Hiroyuki Sugiyama; Eiji Kuwahara; Rie Watanabe; Haruka Kusai; Yoko Kashino; Yoshihiro Kubozono

doi:10.1063/1.1994957

Fabrication of field-effect transistor device with higher fullerene, C88

Takayuki Nagano, Hiroyuki Sugiyama, Eiji Kuwahara, Rie Watanabe, Haruka Kusai, Yoko Kashino, Yoshihiro Kubozono

Research Institute for Interdisciplinary Science

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

A fullerene field-effect transistor (FET) device has been fabricated with thin films of C88, and n -channel normally on depletion-type FET properties have been found in this FET device. The C88 FET exhibited a high mobility, μ, of 2.5× 10-3 cm2 V-1 s-1 at 300 K, in fullerene FETs. The carrier transport showed a thermally activated hopping transport. The n -channel normally on FET properties and the hopping transport reflect the small mobility gap and low carrier concentration in the channel region of C88 thin films.

Original language	English
Article number	023501
Journal	Applied Physics Letters
Volume	87
Issue number	2
DOIs	https://doi.org/10.1063/1.1994957
Publication status	Published - Jul 11 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1994957

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title = "Fabrication of field-effect transistor device with higher fullerene, C88",

abstract = "A fullerene field-effect transistor (FET) device has been fabricated with thin films of C88, and n -channel normally on depletion-type FET properties have been found in this FET device. The C88 FET exhibited a high mobility, μ, of 2.5× 10-3 cm2 V-1 s-1 at 300 K, in fullerene FETs. The carrier transport showed a thermally activated hopping transport. The n -channel normally on FET properties and the hopping transport reflect the small mobility gap and low carrier concentration in the channel region of C88 thin films.",

author = "Takayuki Nagano and Hiroyuki Sugiyama and Eiji Kuwahara and Rie Watanabe and Haruka Kusai and Yoko Kashino and Yoshihiro Kubozono",

note = "Funding Information: This work was supported in part by a Grant-in-Aid (No. 15350089) from MEXT, Japan and by the Mitsubishi Foundation.",

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AU - Nagano, Takayuki

AU - Sugiyama, Hiroyuki

AU - Kuwahara, Eiji

AU - Watanabe, Rie

AU - Kusai, Haruka

AU - Kashino, Yoko

AU - Kubozono, Yoshihiro

N1 - Funding Information: This work was supported in part by a Grant-in-Aid (No. 15350089) from MEXT, Japan and by the Mitsubishi Foundation.

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Y1 - 2005/7/11

N2 - A fullerene field-effect transistor (FET) device has been fabricated with thin films of C88, and n -channel normally on depletion-type FET properties have been found in this FET device. The C88 FET exhibited a high mobility, μ, of 2.5× 10-3 cm2 V-1 s-1 at 300 K, in fullerene FETs. The carrier transport showed a thermally activated hopping transport. The n -channel normally on FET properties and the hopping transport reflect the small mobility gap and low carrier concentration in the channel region of C88 thin films.

AB - A fullerene field-effect transistor (FET) device has been fabricated with thin films of C88, and n -channel normally on depletion-type FET properties have been found in this FET device. The C88 FET exhibited a high mobility, μ, of 2.5× 10-3 cm2 V-1 s-1 at 300 K, in fullerene FETs. The carrier transport showed a thermally activated hopping transport. The n -channel normally on FET properties and the hopping transport reflect the small mobility gap and low carrier concentration in the channel region of C88 thin films.

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Fabrication of field-effect transistor device with higher fullerene, C88

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