Fabrication of field-effect transistor devices with fullerodendron by solution process

Haruka Kusai; Takayuki Nagano; Kumiko Imai; Yoshihiro Kubozono; Yuuki Sako; Yutaka Takaguchi; Akihiko Fujiwara; Nima Akima; Yoshihiro Iwasa; Shojun Hino

doi:10.1063/1.2198098

Fabrication of field-effect transistor devices with fullerodendron by solution process

Haruka Kusai, Takayuki Nagano, Kumiko Imai, Yoshihiro Kubozono, Yuuki Sako, Yutaka Takaguchi, Akihiko Fujiwara, Nima Akima, Yoshihiro Iwasa, Shojun Hino

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21 Citations (Scopus)

Abstract

n -channel field-effect transistor (FET) devices have been fabricated with thin films of fullerodendron on Si O2 Si, polyimide/Au/poly(ethylene terephthalate), and polyvinyl alcohol/Au/poly(ethylene terephthalate) substrates by using solution processes. The value of field-effect mobility μ of the fullerodendron FET reaches 1.7× 10-3 cm2 V-1 s-1 at 300 K. The mobility gap and optical gap have been estimated to be 0.15 and 1.4 eV, respectively. The channel conduction in the FET device follows thermally activated hopping-transport mechanism below 300 K.

Original language	English
Article number	173509
Journal	Applied Physics Letters
Volume	88
Issue number	17
DOIs	https://doi.org/10.1063/1.2198098
Publication status	Published - 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2198098

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title = "Fabrication of field-effect transistor devices with fullerodendron by solution process",

abstract = "n -channel field-effect transistor (FET) devices have been fabricated with thin films of fullerodendron on Si O2 Si, polyimide/Au/poly(ethylene terephthalate), and polyvinyl alcohol/Au/poly(ethylene terephthalate) substrates by using solution processes. The value of field-effect mobility μ of the fullerodendron FET reaches 1.7× 10-3 cm2 V-1 s-1 at 300 K. The mobility gap and optical gap have been estimated to be 0.15 and 1.4 eV, respectively. The channel conduction in the FET device follows thermally activated hopping-transport mechanism below 300 K.",

author = "Haruka Kusai and Takayuki Nagano and Kumiko Imai and Yoshihiro Kubozono and Yuuki Sako and Yutaka Takaguchi and Akihiko Fujiwara and Nima Akima and Yoshihiro Iwasa and Shojun Hino",

note = "Funding Information: This work was in part supported by Industrial Technology Research Grant Program in 2004 from NEDO of Japan. ",

year = "2006",

doi = "10.1063/1.2198098",

language = "English",

volume = "88",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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T1 - Fabrication of field-effect transistor devices with fullerodendron by solution process

AU - Kusai, Haruka

AU - Nagano, Takayuki

AU - Imai, Kumiko

AU - Kubozono, Yoshihiro

AU - Sako, Yuuki

AU - Takaguchi, Yutaka

AU - Fujiwara, Akihiko

AU - Akima, Nima

AU - Iwasa, Yoshihiro

AU - Hino, Shojun

N1 - Funding Information: This work was in part supported by Industrial Technology Research Grant Program in 2004 from NEDO of Japan.

PY - 2006

Y1 - 2006

N2 - n -channel field-effect transistor (FET) devices have been fabricated with thin films of fullerodendron on Si O2 Si, polyimide/Au/poly(ethylene terephthalate), and polyvinyl alcohol/Au/poly(ethylene terephthalate) substrates by using solution processes. The value of field-effect mobility μ of the fullerodendron FET reaches 1.7× 10-3 cm2 V-1 s-1 at 300 K. The mobility gap and optical gap have been estimated to be 0.15 and 1.4 eV, respectively. The channel conduction in the FET device follows thermally activated hopping-transport mechanism below 300 K.

AB - n -channel field-effect transistor (FET) devices have been fabricated with thin films of fullerodendron on Si O2 Si, polyimide/Au/poly(ethylene terephthalate), and polyvinyl alcohol/Au/poly(ethylene terephthalate) substrates by using solution processes. The value of field-effect mobility μ of the fullerodendron FET reaches 1.7× 10-3 cm2 V-1 s-1 at 300 K. The mobility gap and optical gap have been estimated to be 0.15 and 1.4 eV, respectively. The channel conduction in the FET device follows thermally activated hopping-transport mechanism below 300 K.

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Fabrication of field-effect transistor devices with fullerodendron by solution process

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