Fabrication of field-effect transistor devices with fullerodendron by solution process

Haruka Kusai, Takayuki Nagano, Kumiko Imai, Yoshihiro Kubozono, Yuuki Sako, Yutaka Takaguchi, Akihiko Fujiwara, Nima Akima, Yoshihiro Iwasa, Shojun Hino

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21 Citations (Scopus)


n -channel field-effect transistor (FET) devices have been fabricated with thin films of fullerodendron on Si O2 Si, polyimide/Au/poly(ethylene terephthalate), and polyvinyl alcohol/Au/poly(ethylene terephthalate) substrates by using solution processes. The value of field-effect mobility μ of the fullerodendron FET reaches 1.7× 10-3 cm2 V-1 s-1 at 300 K. The mobility gap and optical gap have been estimated to be 0.15 and 1.4 eV, respectively. The channel conduction in the FET device follows thermally activated hopping-transport mechanism below 300 K.

Original languageEnglish
Article number173509
JournalApplied Physics Letters
Issue number17
Publication statusPublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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