Fabrication of Si single-electron transistors with precise dimensions by electron-beam nanolithography

H. Namatsu; Y. Watanabe; K. Yamazaki; T. Yamaguchi; M. Nagase; Y. Ono; A. Fujiwara; S. Horiguchi

doi:10.1116/1.1528919

Fabrication of Si single-electron transistors with precise dimensions by electron-beam nanolithography

H. Namatsu, Y. Watanabe, K. Yamazaki, T. Yamaguchi, M. Nagase, Y. Ono, A. Fujiwara, S. Horiguchi

Faculty of Engineering

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

Single-electron transistors (SETs) with precise dimensions were fabricated by e-beam nanolithography in combination with hydrogen silsesquioxane (HSQ) resist, which provides both high resolution and a small line-edge roughness. Measurement of the electrical characteristics of the SETs revealed the range of wire size that yields clear oscillations. Furthermore, it was found that a relatively long oxidation time widens the range of wire widths for which clear SET oscillations are observed. Moreover, it was demonstrated experimentally that gate capacitance is proportional to nanowire length.

Original language	English
Pages (from-to)	1-5
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	21
Issue number	1 SPEC.
DOIs	https://doi.org/10.1116/1.1528919
Publication status	Published - Jan 2003

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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AU - Namatsu, H.

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AU - Nagase, M.

AU - Ono, Y.

AU - Fujiwara, A.

AU - Horiguchi, S.

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Fabrication of Si single-electron transistors with precise dimensions by electron-beam nanolithography

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