Fabrication of single-electron transistors and circuits using SOIs

Yukinori Ono, Kenji Yamazaki, Masao Nagase, Seiji Horiguchi, Kenji Shiraishi, Yasuo Takahashi

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


The paper describes the fabrication of single-electron transistors and circuits using silicon-on-insulators (SOIs). We first point out that control of the oxidation of Si is quite important and could be the key to the fabrication of quantum devices including single-electron devices. We then introduce our technique for making single-electron transistors, which uses special phenomena that occur during the oxidation of SOIs, and show that the technique enables us to realize primary single-electron circuits as a result of its high controllability, reproducibility and thermal stability.

Original languageEnglish
Pages (from-to)1723-1727
Number of pages5
JournalSolid-State Electronics
Issue number11
Publication statusPublished - Nov 2002
Externally publishedYes


  • Inverter
  • Oxidation
  • Quantum device
  • Silicon-on-insulator
  • Single-electron transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering


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