Fabrications of Pb(Sc1/2Nb1/2)O 3/xPbTiO3 thin films and their structural characterizations

Shutaro Asanuma; Mamoru Fukunaga; Yoshiaki Uesu; Raphael Haumont; Brahim Dkhil; Charlotte Malibert; Jean Michel Kiat

doi:10.1143/JJAP.43.6581

Fabrications of Pb(Sc_1/2Nb_1/2)O ₃/xPbTiO₃ thin films and their structural characterizations

Shutaro Asanuma, Mamoru Fukunaga, Yoshiaki Uesu, Raphael Haumont, Brahim Dkhil, Charlotte Malibert, Jean Michel Kiat

Faculty of Science

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Highly oriented Pb(Sc_1/2Nb_1/2)O₃ (PSN) and Pb(Sc_1/2Nb_1/2)O₃/43%PbTiO₃ (PSN/43%PT) thin films were fabricated on MgO and SrTiO₃ (001) substrates by pulsed laser deposition (PLD) technique. La_1/2Sr _1/2CoO₃ was deposited on the substrate as a bottom electrode layer for dielectric measurements. The orientation of the films was checked by X-ray diffraction method, and is found to be well oriented along the c-axis for PSN and PSN/PT. Film thickness was determined by the Laue oscillation of X-ray diffraction profile. This enables us to determine the number of pulses for stacking one layer of PSN and PSN/PT thin films. The temperature dependences of lattice constants of PSN and PSN/PT thin films were determined. They exhibit small but clear changes at almost the same temperature as that of the ferroelectric transition points of PSN and PSN/PT ceramics. The surface roughness of these films was observed using atomic force and scanning electron microscopes. Temperature change of dielectric constant e and D-E hysteresis loop were determined for PSN and the real part of e shows 850.

Original language	English
Pages (from-to)	6581-6584
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	43
Issue number	9 B
DOIs	https://doi.org/10.1143/JJAP.43.6581
Publication status	Published - Sept 2004

Keywords

Dielectric constant
Pb(Sc Nb)O/43%PbTiO
Pb(ScNb)O
Pulsed laser deposition
Relaxor
Thin film

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.43.6581

Cite this

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title = "Fabrications of Pb(Sc1/2Nb1/2)O 3/xPbTiO3 thin films and their structural characterizations",

abstract = "Highly oriented Pb(Sc1/2Nb1/2)O3 (PSN) and Pb(Sc1/2Nb1/2)O3/43%PbTiO3 (PSN/43%PT) thin films were fabricated on MgO and SrTiO3 (001) substrates by pulsed laser deposition (PLD) technique. La1/2Sr 1/2CoO3 was deposited on the substrate as a bottom electrode layer for dielectric measurements. The orientation of the films was checked by X-ray diffraction method, and is found to be well oriented along the c-axis for PSN and PSN/PT. Film thickness was determined by the Laue oscillation of X-ray diffraction profile. This enables us to determine the number of pulses for stacking one layer of PSN and PSN/PT thin films. The temperature dependences of lattice constants of PSN and PSN/PT thin films were determined. They exhibit small but clear changes at almost the same temperature as that of the ferroelectric transition points of PSN and PSN/PT ceramics. The surface roughness of these films was observed using atomic force and scanning electron microscopes. Temperature change of dielectric constant e and D-E hysteresis loop were determined for PSN and the real part of e shows 850.",

keywords = "Dielectric constant, Pb(Sc Nb)O/43%PbTiO, Pb(ScNb)O, Pulsed laser deposition, Relaxor, Thin film",

author = "Shutaro Asanuma and Mamoru Fukunaga and Yoshiaki Uesu and Raphael Haumont and Brahim Dkhil and Charlotte Malibert and Kiat, {Jean Michel}",

year = "2004",

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AU - Asanuma, Shutaro

AU - Fukunaga, Mamoru

AU - Uesu, Yoshiaki

AU - Haumont, Raphael

AU - Dkhil, Brahim

AU - Malibert, Charlotte

AU - Kiat, Jean Michel

PY - 2004/9

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N2 - Highly oriented Pb(Sc1/2Nb1/2)O3 (PSN) and Pb(Sc1/2Nb1/2)O3/43%PbTiO3 (PSN/43%PT) thin films were fabricated on MgO and SrTiO3 (001) substrates by pulsed laser deposition (PLD) technique. La1/2Sr 1/2CoO3 was deposited on the substrate as a bottom electrode layer for dielectric measurements. The orientation of the films was checked by X-ray diffraction method, and is found to be well oriented along the c-axis for PSN and PSN/PT. Film thickness was determined by the Laue oscillation of X-ray diffraction profile. This enables us to determine the number of pulses for stacking one layer of PSN and PSN/PT thin films. The temperature dependences of lattice constants of PSN and PSN/PT thin films were determined. They exhibit small but clear changes at almost the same temperature as that of the ferroelectric transition points of PSN and PSN/PT ceramics. The surface roughness of these films was observed using atomic force and scanning electron microscopes. Temperature change of dielectric constant e and D-E hysteresis loop were determined for PSN and the real part of e shows 850.

AB - Highly oriented Pb(Sc1/2Nb1/2)O3 (PSN) and Pb(Sc1/2Nb1/2)O3/43%PbTiO3 (PSN/43%PT) thin films were fabricated on MgO and SrTiO3 (001) substrates by pulsed laser deposition (PLD) technique. La1/2Sr 1/2CoO3 was deposited on the substrate as a bottom electrode layer for dielectric measurements. The orientation of the films was checked by X-ray diffraction method, and is found to be well oriented along the c-axis for PSN and PSN/PT. Film thickness was determined by the Laue oscillation of X-ray diffraction profile. This enables us to determine the number of pulses for stacking one layer of PSN and PSN/PT thin films. The temperature dependences of lattice constants of PSN and PSN/PT thin films were determined. They exhibit small but clear changes at almost the same temperature as that of the ferroelectric transition points of PSN and PSN/PT ceramics. The surface roughness of these films was observed using atomic force and scanning electron microscopes. Temperature change of dielectric constant e and D-E hysteresis loop were determined for PSN and the real part of e shows 850.

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