Fermi level tuning of Ag-doped Bi                         
                        2
                                                 Se                         
                        3
                                                  topological insulator

Eri Uesugi; Takaki Uchiyama; Hidenori Goto; Hiromi Ota; Teppei Ueno; Hirokazu Fujiwara; Kensei Terashima; Takayoshi Yokoya; Fumihiko Matsui; Jun Akimitsu; Kaya Kobayashi; Yoshihiro Kubozono

doi:10.1038/s41598-019-41906-7

Fermi level tuning of Ag-doped Bi ₂ Se ₃ topological insulator

Eri Uesugi, Takaki Uchiyama, Hidenori Goto, Hiromi Ota, Teppei Ueno, Hirokazu Fujiwara, Kensei Terashima, Takayoshi Yokoya, Fumihiko Matsui, Jun Akimitsu, Kaya Kobayashi, Yoshihiro Kubozono

Research Institute for Interdisciplinary Science

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21 Citations (Scopus)

Abstract

The temperature dependence of the resistivity (ρ) of Ag-doped Bi ₂ Se ₃ (Ag _x Bi _2−x Se ₃ ) shows insulating behavior above 35 K, but below 35 K, ρ suddenly decreases with decreasing temperature, in contrast to the metallic behavior for non-doped Bi ₂ Se ₃ at 1.5–300 K. This significant change in transport properties from metallic behavior clearly shows that the Ag doping of Bi ₂ Se ₃ can effectively tune the Fermi level downward. The Hall effect measurement shows that carrier is still electron in Ag _x Bi _2−x Se ₃ and the electron density changes with temperature to reasonably explain the transport properties. Furthermore, the positive gating of Ag _x Bi _2−x Se ₃ provides metallic behavior that is similar to that of non-doped Bi ₂ Se ₃ , indicating a successful upward tuning of the Fermi level.

Original language	English
Article number	5376
Pages (from-to)	5376
Journal	Scientific reports
Volume	9
Issue number	1
DOIs	https://doi.org/10.1038/s41598-019-41906-7
Publication status	Published - Mar 29 2019

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Uesugi, E., Uchiyama, T., Goto, H., Ota, H., Ueno, T., Fujiwara, H., Terashima, K., Yokoya, T., Matsui, F., Akimitsu, J., Kobayashi, K., & Kubozono, Y. (2019). Fermi level tuning of Ag-doped Bi ₂ Se ₃ topological insulator. Scientific reports, 9(1), 5376. Article 5376. https://doi.org/10.1038/s41598-019-41906-7

Fermi level tuning of Ag-doped Bi ₂ Se ₃ topological insulator. / Uesugi, Eri; Uchiyama, Takaki; Goto, Hidenori et al.
In: Scientific reports, Vol. 9, No. 1, 5376, 29.03.2019, p. 5376.

Research output: Contribution to journal › Article › peer-review

Uesugi, E, Uchiyama, T, Goto, H, Ota, H, Ueno, T, Fujiwara, H, Terashima, K, Yokoya, T, Matsui, F, Akimitsu, J , Kobayashi, K & Kubozono, Y 2019, 'Fermi level tuning of Ag-doped Bi ₂ Se ₃ topological insulator', Scientific reports, vol. 9, no. 1, 5376, pp. 5376. https://doi.org/10.1038/s41598-019-41906-7

Uesugi E, Uchiyama T, Goto H, Ota H, Ueno T, Fujiwara H et al. Fermi level tuning of Ag-doped Bi ₂ Se ₃ topological insulator. Scientific reports. 2019 Mar 29;9(1):5376. 5376. doi: 10.1038/s41598-019-41906-7

Uesugi, Eri ; Uchiyama, Takaki ; Goto, Hidenori et al. / Fermi level tuning of Ag-doped Bi ₂ Se ₃ topological insulator. In: Scientific reports. 2019 ; Vol. 9, No. 1. pp. 5376.

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abstract = " The temperature dependence of the resistivity (ρ) of Ag-doped Bi 2 Se 3 (Ag x Bi 2−x Se 3 ) shows insulating behavior above 35 K, but below 35 K, ρ suddenly decreases with decreasing temperature, in contrast to the metallic behavior for non-doped Bi 2 Se 3 at 1.5–300 K. This significant change in transport properties from metallic behavior clearly shows that the Ag doping of Bi 2 Se 3 can effectively tune the Fermi level downward. The Hall effect measurement shows that carrier is still electron in Ag x Bi 2−x Se 3 and the electron density changes with temperature to reasonably explain the transport properties. Furthermore, the positive gating of Ag x Bi 2−x Se 3 provides metallic behavior that is similar to that of non-doped Bi 2 Se 3 , indicating a successful upward tuning of the Fermi level. ",

author = "Eri Uesugi and Takaki Uchiyama and Hidenori Goto and Hiromi Ota and Teppei Ueno and Hirokazu Fujiwara and Kensei Terashima and Takayoshi Yokoya and Fumihiko Matsui and Jun Akimitsu and Kaya Kobayashi and Yoshihiro Kubozono",

note = "Funding Information: The authors greatly appreciate Prof. Justin Ye of University of Groningen and Prof. Harald O. Jeschke of Okayama University for their valuable discussion. Also the authors are debted Ms. Tong He for her valuable assistance for sample characterization. This study was partly supported by Grants-in-aid (26105004, 26400361, 14J00228 and 17K05500) from MEXT, by the ACT-C program (No. JPMJCR12YW) of JST, and by the Program for Promoting the Enhancement of Research Universities. Publisher Copyright: {\textcopyright} 2019, The Author(s).",

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AU - Uchiyama, Takaki

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AU - Ueno, Teppei

AU - Fujiwara, Hirokazu

AU - Terashima, Kensei

AU - Yokoya, Takayoshi

AU - Matsui, Fumihiko

AU - Akimitsu, Jun

AU - Kobayashi, Kaya

AU - Kubozono, Yoshihiro

N1 - Funding Information: The authors greatly appreciate Prof. Justin Ye of University of Groningen and Prof. Harald O. Jeschke of Okayama University for their valuable discussion. Also the authors are debted Ms. Tong He for her valuable assistance for sample characterization. This study was partly supported by Grants-in-aid (26105004, 26400361, 14J00228 and 17K05500) from MEXT, by the ACT-C program (No. JPMJCR12YW) of JST, and by the Program for Promoting the Enhancement of Research Universities. Publisher Copyright: © 2019, The Author(s).

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N2 - The temperature dependence of the resistivity (ρ) of Ag-doped Bi 2 Se 3 (Ag x Bi 2−x Se 3 ) shows insulating behavior above 35 K, but below 35 K, ρ suddenly decreases with decreasing temperature, in contrast to the metallic behavior for non-doped Bi 2 Se 3 at 1.5–300 K. This significant change in transport properties from metallic behavior clearly shows that the Ag doping of Bi 2 Se 3 can effectively tune the Fermi level downward. The Hall effect measurement shows that carrier is still electron in Ag x Bi 2−x Se 3 and the electron density changes with temperature to reasonably explain the transport properties. Furthermore, the positive gating of Ag x Bi 2−x Se 3 provides metallic behavior that is similar to that of non-doped Bi 2 Se 3 , indicating a successful upward tuning of the Fermi level.

AB - The temperature dependence of the resistivity (ρ) of Ag-doped Bi 2 Se 3 (Ag x Bi 2−x Se 3 ) shows insulating behavior above 35 K, but below 35 K, ρ suddenly decreases with decreasing temperature, in contrast to the metallic behavior for non-doped Bi 2 Se 3 at 1.5–300 K. This significant change in transport properties from metallic behavior clearly shows that the Ag doping of Bi 2 Se 3 can effectively tune the Fermi level downward. The Hall effect measurement shows that carrier is still electron in Ag x Bi 2−x Se 3 and the electron density changes with temperature to reasonably explain the transport properties. Furthermore, the positive gating of Ag x Bi 2−x Se 3 provides metallic behavior that is similar to that of non-doped Bi 2 Se 3 , indicating a successful upward tuning of the Fermi level.

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Fermi level tuning of Ag-doped Bi ₂ Se ₃ topological insulator

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