TY - JOUR
T1 - Fermi surface properties and de Haas–van Alphen oscillation in both the normal and superconducting mixed states of URu2Si2
AU - Ohkuni, H.
AU - Inada, Y.
AU - Tokiwa, Y.
AU - Sakurai, K.
AU - Settai, R.
AU - Honma, T.
AU - Haga, Y.
AU - Yamamoto, E.
AU - Ōnuki, Y.
AU - Yamagami, H.
AU - Takahashi, S.
AU - Yanagisawa, T.
PY - 1999/7
Y1 - 1999/7
N2 - We have succeeded in growing a high-quality single crystal of URu2Si2 with a residual resistivity ratio of 255 and performed magnetoresistance and de Haas–van Alphen (dHvA) experiments. The dHvA oscillations were observed clearly in both the normal and superconducting mixed states. From the magnetoresistance experiments, it is concluded that URu2Si2 is a compensated metal with equal carrier numbers of electrons and holes. In the dHvA experiments we observed three kinds of Fermi surfaces. We studied precisely the Fermi surface properties in both the normal and mixed states. The dHvA frequency does not change in magnitude between the normal and mixed states, while the cyclotron effective mass is reduced, and the corresponding Dingle temperature or scattering rate of the conduction electron increases in the mixed state.
AB - We have succeeded in growing a high-quality single crystal of URu2Si2 with a residual resistivity ratio of 255 and performed magnetoresistance and de Haas–van Alphen (dHvA) experiments. The dHvA oscillations were observed clearly in both the normal and superconducting mixed states. From the magnetoresistance experiments, it is concluded that URu2Si2 is a compensated metal with equal carrier numbers of electrons and holes. In the dHvA experiments we observed three kinds of Fermi surfaces. We studied precisely the Fermi surface properties in both the normal and mixed states. The dHvA frequency does not change in magnitude between the normal and mixed states, while the cyclotron effective mass is reduced, and the corresponding Dingle temperature or scattering rate of the conduction electron increases in the mixed state.
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U2 - 10.1080/13642819908214859
DO - 10.1080/13642819908214859
M3 - Article
AN - SCOPUS:0032627401
SN - 1364-2812
VL - 79
SP - 1045
EP - 1077
JO - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
JF - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
IS - 7
ER -