Ferroelectric properties of epitaxial BiFe0.97Mn 0.03O3 thin films with different crystal orientations deposited on buffered Si substrates

Hyun Young Go; Naoki Wakiya; Takanori Kiguchi; Tomohiko Yoshioka; Osamu Sakurai; Jeffrey S. Cross; Junzo Tanaka; Kazuo Shinozaki

doi:10.4028/www.scientific.net/KEM.421-422.111

Ferroelectric properties of epitaxial BiFe_0.97Mn _0.03O₃ thin films with different crystal orientations deposited on buffered Si substrates

Hyun Young Go, Naoki Wakiya, Takanori Kiguchi, Tomohiko Yoshioka, Osamu Sakurai, Jeffrey S. Cross, Junzo Tanaka, Kazuo Shinozaki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We investigated electrical properties of epitaxial Mn doped bismuth ferrite BiFe_0.97Mn_0.03O₃ (BFMO) thin films with different crystal orientations deposited on Si substrates with appropriate buffer layers. Epitaxial SrRuO₃ (SRO) thin films with (001), (101), and (111) orientations were grown on CeO₂/yttria-stabilized zirconia (YSZ)/Si(001) substrates and YSZ/Si(001), respectively, by the insertion of MgO and TiO₂ atomic layers using pulsed-laser deposition (PLD). Using spin coating, we deposited BFMO thin films onto orientated SRO thin films. The BFMO orientation followed the SRO orientation. The Pr values of the BFMO were ordered as follows {111}>{110}>{100}, which is the same as that predicted by crystallographic considerations. The largest Pr value of the {111} orientation is 76 μC/cm² at 100 kHz, 25°C.

Original language	English
Title of host publication	Asian Ceramic Science for Electronics III and Electroceramics in Japan XII
Publisher	Trans Tech Publications Ltd
Pages	111-114
Number of pages	4
ISBN (Print)	0878493069, 9780878493067
DOIs	https://doi.org/10.4028/www.scientific.net/KEM.421-422.111
Publication status	Published - 2010
Externally published	Yes
Event	6th Asian Meeting on Electroceramics, AMEC-6, in conjunction with the Electronics Division Meeting of the Ceramic Society of Japan - Tsukuba, Japan Duration: Oct 22 2008 → Oct 24 2008

Publication series

Name	Key Engineering Materials
Volume	421-422
ISSN (Print)	1013-9826
ISSN (Electronic)	1662-9795

Other

Other	6th Asian Meeting on Electroceramics, AMEC-6, in conjunction with the Electronics Division Meeting of the Ceramic Society of Japan
Country/Territory	Japan
City	Tsukuba
Period	10/22/08 → 10/24/08

Keywords

Crystal orientation
Epitaxial
PLD
Thin film

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

Access to Document

10.4028/www.scientific.net/KEM.421-422.111

Cite this

Go, H. Y., Wakiya, N., Kiguchi, T., Yoshioka, T., Sakurai, O., Cross, J. S., Tanaka, J., & Shinozaki, K. (2010). Ferroelectric properties of epitaxial BiFe_0.97Mn _0.03O₃ thin films with different crystal orientations deposited on buffered Si substrates. In Asian Ceramic Science for Electronics III and Electroceramics in Japan XII (pp. 111-114). (Key Engineering Materials; Vol. 421-422). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/KEM.421-422.111

Ferroelectric properties of epitaxial BiFe_0.97Mn _0.03O₃ thin films with different crystal orientations deposited on buffered Si substrates. / Go, Hyun Young; Wakiya, Naoki; Kiguchi, Takanori et al.
Asian Ceramic Science for Electronics III and Electroceramics in Japan XII. Trans Tech Publications Ltd, 2010. p. 111-114 (Key Engineering Materials; Vol. 421-422).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Go, HY, Wakiya, N, Kiguchi, T, Yoshioka, T, Sakurai, O, Cross, JS, Tanaka, J & Shinozaki, K 2010, Ferroelectric properties of epitaxial BiFe_0.97Mn _0.03O₃ thin films with different crystal orientations deposited on buffered Si substrates. in Asian Ceramic Science for Electronics III and Electroceramics in Japan XII. Key Engineering Materials, vol. 421-422, Trans Tech Publications Ltd, pp. 111-114, 6th Asian Meeting on Electroceramics, AMEC-6, in conjunction with the Electronics Division Meeting of the Ceramic Society of Japan, Tsukuba, Japan, 10/22/08. https://doi.org/10.4028/www.scientific.net/KEM.421-422.111

Go HY, Wakiya N, Kiguchi T, Yoshioka T, Sakurai O, Cross JS et al. Ferroelectric properties of epitaxial BiFe_0.97Mn _0.03O₃ thin films with different crystal orientations deposited on buffered Si substrates. In Asian Ceramic Science for Electronics III and Electroceramics in Japan XII. Trans Tech Publications Ltd. 2010. p. 111-114. (Key Engineering Materials). doi: 10.4028/www.scientific.net/KEM.421-422.111

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abstract = "We investigated electrical properties of epitaxial Mn doped bismuth ferrite BiFe0.97Mn0.03O3 (BFMO) thin films with different crystal orientations deposited on Si substrates with appropriate buffer layers. Epitaxial SrRuO3 (SRO) thin films with (001), (101), and (111) orientations were grown on CeO2/yttria-stabilized zirconia (YSZ)/Si(001) substrates and YSZ/Si(001), respectively, by the insertion of MgO and TiO2 atomic layers using pulsed-laser deposition (PLD). Using spin coating, we deposited BFMO thin films onto orientated SRO thin films. The BFMO orientation followed the SRO orientation. The Pr values of the BFMO were ordered as follows {111}>{110}>{100}, which is the same as that predicted by crystallographic considerations. The largest Pr value of the {111} orientation is 76 μC/cm2 at 100 kHz, 25°C.",

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AU - Sakurai, Osamu

AU - Cross, Jeffrey S.

AU - Tanaka, Junzo

AU - Shinozaki, Kazuo

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N2 - We investigated electrical properties of epitaxial Mn doped bismuth ferrite BiFe0.97Mn0.03O3 (BFMO) thin films with different crystal orientations deposited on Si substrates with appropriate buffer layers. Epitaxial SrRuO3 (SRO) thin films with (001), (101), and (111) orientations were grown on CeO2/yttria-stabilized zirconia (YSZ)/Si(001) substrates and YSZ/Si(001), respectively, by the insertion of MgO and TiO2 atomic layers using pulsed-laser deposition (PLD). Using spin coating, we deposited BFMO thin films onto orientated SRO thin films. The BFMO orientation followed the SRO orientation. The Pr values of the BFMO were ordered as follows {111}>{110}>{100}, which is the same as that predicted by crystallographic considerations. The largest Pr value of the {111} orientation is 76 μC/cm2 at 100 kHz, 25°C.

AB - We investigated electrical properties of epitaxial Mn doped bismuth ferrite BiFe0.97Mn0.03O3 (BFMO) thin films with different crystal orientations deposited on Si substrates with appropriate buffer layers. Epitaxial SrRuO3 (SRO) thin films with (001), (101), and (111) orientations were grown on CeO2/yttria-stabilized zirconia (YSZ)/Si(001) substrates and YSZ/Si(001), respectively, by the insertion of MgO and TiO2 atomic layers using pulsed-laser deposition (PLD). Using spin coating, we deposited BFMO thin films onto orientated SRO thin films. The BFMO orientation followed the SRO orientation. The Pr values of the BFMO were ordered as follows {111}>{110}>{100}, which is the same as that predicted by crystallographic considerations. The largest Pr value of the {111} orientation is 76 μC/cm2 at 100 kHz, 25°C.

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