Ferromagnetism in Cu-doped AlN films

Fan Yong Ran, M. Subramanian, Masaki Tanemura, Yasuhiko Hayashi, Takehiko Hihara

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53 Citations (Scopus)


AlN films doped with 3.2-8.2 at % Cu were deposited by helicon magnetron sputtering. The films exhibited ferromagnetism with a Curie temperature above 360 K. The observed magnetic anisotropy and exclusion of ferromagnetic contamination indicated that the ferromagnetism was the intrinsic property of Cu-doped AlN films. Room-temperature (RT) saturation magnetization (M s) tended to decrease with increasing Cu concentration and the maximum RT Ms obtained was about 8.5 emu/ cm3 (0.6 μBCu). Vacuum annealing increased the RT Ms values and meanwhile reduced ratio of N/ (Al+Cu), which suggested that Al interstitial and N vacancy might contribute to the observed ferromagnetic behavior.

Original languageEnglish
Article number112111
JournalApplied Physics Letters
Issue number11
Publication statusPublished - 2009
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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