Ferromagnetism in Cu-doped AlN films

Fan Yong Ran; M. Subramanian; Masaki Tanemura; Yasuhiko Hayashi; Takehiko Hihara

doi:10.1063/1.3232238

Ferromagnetism in Cu-doped AlN films

Fan Yong Ran, M. Subramanian, Masaki Tanemura, Yasuhiko Hayashi, Takehiko Hihara

Research output: Contribution to journal › Article › peer-review

53 Citations (Scopus)

Abstract

AlN films doped with 3.2-8.2 at % Cu were deposited by helicon magnetron sputtering. The films exhibited ferromagnetism with a Curie temperature above 360 K. The observed magnetic anisotropy and exclusion of ferromagnetic contamination indicated that the ferromagnetism was the intrinsic property of Cu-doped AlN films. Room-temperature (RT) saturation magnetization (M _s) tended to decrease with increasing Cu concentration and the maximum RT M_s obtained was about 8.5 emu/ cm³ (0.6 μ_BCu). Vacuum annealing increased the RT M_s values and meanwhile reduced ratio of N/ (Al+Cu), which suggested that Al interstitial and N vacancy might contribute to the observed ferromagnetic behavior.

Original language	English
Article number	112111
Journal	Applied Physics Letters
Volume	95
Issue number	11
DOIs	https://doi.org/10.1063/1.3232238
Publication status	Published - 2009
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Ferromagnetism in Cu-doped AlN films",

abstract = "AlN films doped with 3.2-8.2 at % Cu were deposited by helicon magnetron sputtering. The films exhibited ferromagnetism with a Curie temperature above 360 K. The observed magnetic anisotropy and exclusion of ferromagnetic contamination indicated that the ferromagnetism was the intrinsic property of Cu-doped AlN films. Room-temperature (RT) saturation magnetization (M s) tended to decrease with increasing Cu concentration and the maximum RT Ms obtained was about 8.5 emu/ cm3 (0.6 μBCu). Vacuum annealing increased the RT Ms values and meanwhile reduced ratio of N/ (Al+Cu), which suggested that Al interstitial and N vacancy might contribute to the observed ferromagnetic behavior.",

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AU - Ran, Fan Yong

AU - Subramanian, M.

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AU - Hayashi, Yasuhiko

AU - Hihara, Takehiko

PY - 2009

Y1 - 2009

N2 - AlN films doped with 3.2-8.2 at % Cu were deposited by helicon magnetron sputtering. The films exhibited ferromagnetism with a Curie temperature above 360 K. The observed magnetic anisotropy and exclusion of ferromagnetic contamination indicated that the ferromagnetism was the intrinsic property of Cu-doped AlN films. Room-temperature (RT) saturation magnetization (M s) tended to decrease with increasing Cu concentration and the maximum RT Ms obtained was about 8.5 emu/ cm3 (0.6 μBCu). Vacuum annealing increased the RT Ms values and meanwhile reduced ratio of N/ (Al+Cu), which suggested that Al interstitial and N vacancy might contribute to the observed ferromagnetic behavior.

AB - AlN films doped with 3.2-8.2 at % Cu were deposited by helicon magnetron sputtering. The films exhibited ferromagnetism with a Curie temperature above 360 K. The observed magnetic anisotropy and exclusion of ferromagnetic contamination indicated that the ferromagnetism was the intrinsic property of Cu-doped AlN films. Room-temperature (RT) saturation magnetization (M s) tended to decrease with increasing Cu concentration and the maximum RT Ms obtained was about 8.5 emu/ cm3 (0.6 μBCu). Vacuum annealing increased the RT Ms values and meanwhile reduced ratio of N/ (Al+Cu), which suggested that Al interstitial and N vacancy might contribute to the observed ferromagnetic behavior.

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Ferromagnetism in Cu-doped AlN films

Abstract

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