Film formation by motion control of ionized precursors in electric field

Motoaki Adachi; Toshiyuki Fujimoto; Koichi Nakaso; Kikuo Okuyama; Frank G. Shi; Hideki Sato; Toshio Ando; Hideki Tomioka

doi:10.1063/1.124889

Film formation by motion control of ionized precursors in electric field

Motoaki Adachi, Toshiyuki Fujimoto, Koichi Nakaso, Kikuo Okuyama, Frank G. Shi, Hideki Sato, Toshio Ando, Hideki Tomioka

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A chemical vapor deposition (CVD) method, called ionization CVD, in which ionized source molecules were deposited on a substrate by Coulombic force, was developed to control gas-phase reaction and film morphology. This method was applied to the tetraethylorthosilicate (TEOS)/ ozone-atmospheric pressure chemical vapor deposition process by using the surface corona discharge. TEOS/O₃ films deposited on SiN and SiO₂ films by this CVD method showed good properties for the flow shape, the gap filling and the surface morphology. In Fourier-transform infrared spectra of gas-phase intermediates collected in the vapor condenser, the intensity of the absorption peak at 600 cm^-1 was different between ionized intermediates and nonionized intermediates.

Original language	English
Pages (from-to)	1973-1975
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	13
DOIs	https://doi.org/10.1063/1.124889
Publication status	Published - Sept 27 1999
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "A chemical vapor deposition (CVD) method, called ionization CVD, in which ionized source molecules were deposited on a substrate by Coulombic force, was developed to control gas-phase reaction and film morphology. This method was applied to the tetraethylorthosilicate (TEOS)/ ozone-atmospheric pressure chemical vapor deposition process by using the surface corona discharge. TEOS/O3 films deposited on SiN and SiO2 films by this CVD method showed good properties for the flow shape, the gap filling and the surface morphology. In Fourier-transform infrared spectra of gas-phase intermediates collected in the vapor condenser, the intensity of the absorption peak at 600 cm-1 was different between ionized intermediates and nonionized intermediates.",

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T1 - Film formation by motion control of ionized precursors in electric field

AU - Adachi, Motoaki

AU - Fujimoto, Toshiyuki

AU - Nakaso, Koichi

AU - Okuyama, Kikuo

AU - Shi, Frank G.

AU - Sato, Hideki

AU - Ando, Toshio

AU - Tomioka, Hideki

PY - 1999/9/27

Y1 - 1999/9/27

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AB - A chemical vapor deposition (CVD) method, called ionization CVD, in which ionized source molecules were deposited on a substrate by Coulombic force, was developed to control gas-phase reaction and film morphology. This method was applied to the tetraethylorthosilicate (TEOS)/ ozone-atmospheric pressure chemical vapor deposition process by using the surface corona discharge. TEOS/O3 films deposited on SiN and SiO2 films by this CVD method showed good properties for the flow shape, the gap filling and the surface morphology. In Fourier-transform infrared spectra of gas-phase intermediates collected in the vapor condenser, the intensity of the absorption peak at 600 cm-1 was different between ionized intermediates and nonionized intermediates.

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Film formation by motion control of ionized precursors in electric field

Abstract

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