Flexible InGaZnO TFT devices obtained via humid-UV irradiation with an aqueous-fluoroalcoholic precursor

Shintaro Ogura, Heajeong Cheong, Sei Uemura, Hirobumi Ushijima, Nobuko Fukuda

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Wedesigned an aqueous-fluoroalcoholic InGaZnO precursor for obtaining thin-film transistors (TFTs) on a flexible plastic film by spin-coating and low-temperature annealing processes without inert gas conditions. The precursor shows a low surface tension (23.7mNm-1), which is advantageous for homogeneous coating onto plastic film. Thermal analysis of the precursor indicates formation of metal oxides at less than 300 °C. InGaZnO TFTs were obtained from the precursor by annealing at 300 °CviaUVirradiation under humid atmosphere on a transparent polyimide film as well as on a p-Si substrate. The bottom-gate top-contact TFTs on the p-Si show 5.1 cm2 V-1 s-1 of the average saturation mobility. The top-gate top-contact TFTs on the transparent polyimide film drive with 0.99 cm2 V-1 s-1 of the average saturation mobility. The transparent polyimide film maintains flexibility even after humid-UV irradiation and annealing processes. The InGaZnO TFTs on the transparent polyimide film show more than 80% transmittance in the visible light region between 400 and 780 nm.

Original languageEnglish
Article number045001
JournalFlexible and Printed Electronics
Volume1
Issue number4
DOIs
Publication statusPublished - Dec 1 2016
Externally publishedYes

Keywords

  • Flexible transparent fil
  • Humid-UV process
  • InGaZnO
  • Solution process
  • Surface tension

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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