Abstract
We observed that a defect related to carbon and phosphorus was formed during the carbon-enhanced annihilation of thermal donors at 470°C in silicon. We determined, using deep-level transient spectroscopy (DLTS), that the defect has a deep level at Ec - 0.36 eV and its density has positive correlation with carbon and phosphorus densities. The formation rate of the defect is proportional to the phosphorus density. We also observed the 767 meV photoluminescence line (P-line) that had been identified as the complex with a core of interstitial carbon, vacancy and oxygen dimer. We tentatively ascribe the Ec - 0.36 eV defect to the pair of interstitial carbon and substitutional phosphorus.
| Original language | English |
|---|---|
| Pages (from-to) | L101-L104 |
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 37 |
| Issue number | 2 PART A |
| Publication status | Published - Feb 1 1998 |
Keywords
- Carbon
- DLTS
- Deep level
- Defect
- Phosphorus
- Photoluminescence
- Silicon
- Thermal donor
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)