TY - JOUR
T1 - Formation of thin oxide films on room-temperature silicon (100) by exposure to a neutral beam of hyperthermal atomic and molecular oxygen
AU - Tagawa, Masahito
AU - Ema, Tatsuhiko
AU - Kinoshita, Hiroshi
AU - Ohmae, Nobuo
AU - Umeno, Masataka
AU - Minton, Timothy K.
PY - 1998/12/1
Y1 - 1998/12/1
N2 - Silicon (100) surfaces at room temperature were oxidized in a hyperthermal beam containing nearly equal fractions of atomic and molecular oxygen. An oxide layer with a terminal thicknes of 4.5 nm was formed on the Si surfaces, and this layer was composed mostly of silicon dioxide (SiO2). However, a significant fraction of suboxide (SiOx, x < 2) was formed at the Si/SiO2 interface, where the intrinsic stress was high. Post annealing in vacuum at 1000°C for 30 min decreased the amount of suboxide and stress at the interface.
AB - Silicon (100) surfaces at room temperature were oxidized in a hyperthermal beam containing nearly equal fractions of atomic and molecular oxygen. An oxide layer with a terminal thicknes of 4.5 nm was formed on the Si surfaces, and this layer was composed mostly of silicon dioxide (SiO2). However, a significant fraction of suboxide (SiOx, x < 2) was formed at the Si/SiO2 interface, where the intrinsic stress was high. Post annealing in vacuum at 1000°C for 30 min decreased the amount of suboxide and stress at the interface.
KW - Atomic oxygen
KW - Neutral beam oxidation
KW - Oxidation
KW - Room temperature
KW - Silicon
KW - Silicon dioxide (SiO)
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U2 - 10.1143/jjap.37.l1455
DO - 10.1143/jjap.37.l1455
M3 - Article
AN - SCOPUS:0032304790
SN - 0021-4922
VL - 37
SP - L1455-L1457
JO - Japanese Journal of Applied Physics, Part 2: Letters
JF - Japanese Journal of Applied Physics, Part 2: Letters
IS - 12 PART A
ER -