Hall effect in single crystal CeCu2Si2 under high pressure

S. Araki, Y. Shiroyama, T. Shinohara, Y. Ito, Y. Ikeda, T. C. Kobayashi, S. Seiro, C. Geibel, F. Steglich

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


Hall effect measurements were carried out under high pressures up to 4.9 GPa in a single crystal of CeCu2Si2. The temperature dependence of the Hall coefficient is interpreted to be composed of two peaks below room temperature. The high-temperature peak shows strong pressure dependence, where the peak shifts from 20 K at ambient pressure to 125 K at 4.9 GPa. This peak is a consequence of the anomalous Hall effect due to skew scattering. The low-temperature peak shifts from 5 K at ambient pressure to 15 K at 4.9 GPa and the magnitude of the peak shows the maximum around 4.1 GPa at which the superconducting transition temperature also reaches the maximum.

Original languageEnglish
Article number012005
JournalJournal of Physics: Conference Series
Issue number1
Publication statusPublished - 2012
EventInternational Conference on Strongly Correlated Electron Systems, SCES 2011 - Cambridge, United Kingdom
Duration: Aug 29 2011Sept 3 2011

ASJC Scopus subject areas

  • General Physics and Astronomy


Dive into the research topics of 'Hall effect in single crystal CeCu2Si2 under high pressure'. Together they form a unique fingerprint.

Cite this