High efficiency edge-illuminated uni-travelling-carrier-structure refracting-facet photodiode

H. Fukano; Y. Muramoto; K. Takahata; Y. Matsuoka

doi:10.1049/el:19991148

High efficiency edge-illuminated uni-travelling-carrier-structure refracting-facet photodiode

H. Fukano, Y. Muramoto, K. Takahata, Y. Matsuoka

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Abstract

A high-efficiency uni-travelling carrier (UTC) photodiode was developed using an edge-illuminated refracting-facet photodiode (RFPD) structure. The fabricated UTC-RFPD exhibited a maximum responsivity as high as 0.48 A/W even with a 280-nm-thin absorption layer, and a high output peak-to-peak voltage of 1.5 V at 40 Gbit/s.

Original language	English
Pages (from-to)	1664-1665
Number of pages	2
Journal	Electronics Letters
Volume	35
Issue number	19
DOIs	https://doi.org/10.1049/el:19991148
Publication status	Published - Sept 16 1999
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19991148

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abstract = "A high-efficiency uni-travelling carrier (UTC) photodiode was developed using an edge-illuminated refracting-facet photodiode (RFPD) structure. The fabricated UTC-RFPD exhibited a maximum responsivity as high as 0.48 A/W even with a 280-nm-thin absorption layer, and a high output peak-to-peak voltage of 1.5 V at 40 Gbit/s.",

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AU - Fukano, H.

AU - Muramoto, Y.

AU - Takahata, K.

AU - Matsuoka, Y.

PY - 1999/9/16

Y1 - 1999/9/16

N2 - A high-efficiency uni-travelling carrier (UTC) photodiode was developed using an edge-illuminated refracting-facet photodiode (RFPD) structure. The fabricated UTC-RFPD exhibited a maximum responsivity as high as 0.48 A/W even with a 280-nm-thin absorption layer, and a high output peak-to-peak voltage of 1.5 V at 40 Gbit/s.

AB - A high-efficiency uni-travelling carrier (UTC) photodiode was developed using an edge-illuminated refracting-facet photodiode (RFPD) structure. The fabricated UTC-RFPD exhibited a maximum responsivity as high as 0.48 A/W even with a 280-nm-thin absorption layer, and a high output peak-to-peak voltage of 1.5 V at 40 Gbit/s.

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High efficiency edge-illuminated uni-travelling-carrier-structure refracting-facet photodiode

Abstract

ASJC Scopus subject areas

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