High-performance C60 and picene thin film field-effect transistors with conducting polymer electrodes in bottom contact structure

Yumiko Kaji; Ryoji Mitsuhashi; Xuesong Lee; Hideki Okamoto; Takashi Kambe; Naoshi Ikeda; Akihiko Fujiwara; Minoru Yamaji; Kenji Omote; Yoshihiro Kubozono

doi:10.1016/j.orgel.2009.01.006

High-performance C₆₀ and picene thin film field-effect transistors with conducting polymer electrodes in bottom contact structure

Yumiko Kaji, Ryoji Mitsuhashi, Xuesong Lee, Hideki Okamoto, Takashi Kambe, Naoshi Ikeda, Akihiko Fujiwara, Minoru Yamaji, Kenji Omote, Yoshihiro Kubozono

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

C₆₀ and picene thin film field-effect transistors (FETs) in bottom contact structure have been fabricated with poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) electrodes for a realization of mechanical flexible organic FETs. The C₆₀ thin film FETs showed n-channel enhancement-type characteristics with the field-effect mobility μ value of 0.41 cm² V^-1 s^-1, while the picene thin film FET showed p-channel enhancement-type characteristics with the μ of 0.61 cm² V^-1 s^-1. The μ values recorded for C₆₀ and picene thin film FETs are comparable to those for C₆₀ and picene thin film FETs with Au electrodes.

Original language	English
Pages (from-to)	432-436
Number of pages	5
Journal	Organic Electronics
Volume	10
Issue number	3
DOIs	https://doi.org/10.1016/j.orgel.2009.01.006
Publication status	Published - May 2009

Keywords

Bottom contact structure
C
Conducting polymer electrodes
Organic thin film transistors
Picene

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Biomaterials
Chemistry(all)
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1016/j.orgel.2009.01.006

Cite this

@article{dfb1ff827fa9409ab84ce60d32b58ea7,

title = "High-performance C60 and picene thin film field-effect transistors with conducting polymer electrodes in bottom contact structure",

abstract = "C60 and picene thin film field-effect transistors (FETs) in bottom contact structure have been fabricated with poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) electrodes for a realization of mechanical flexible organic FETs. The C60 thin film FETs showed n-channel enhancement-type characteristics with the field-effect mobility μ value of 0.41 cm2 V-1 s-1, while the picene thin film FET showed p-channel enhancement-type characteristics with the μ of 0.61 cm2 V-1 s-1. The μ values recorded for C60 and picene thin film FETs are comparable to those for C60 and picene thin film FETs with Au electrodes.",

keywords = "Bottom contact structure, C, Conducting polymer electrodes, Organic thin film transistors, Picene",

author = "Yumiko Kaji and Ryoji Mitsuhashi and Xuesong Lee and Hideki Okamoto and Takashi Kambe and Naoshi Ikeda and Akihiko Fujiwara and Minoru Yamaji and Kenji Omote and Yoshihiro Kubozono",

note = "Funding Information: The authors appreciate to Naoko Kawaski for her helpful assistance. This work was partly supported by a Grant-in-Aid (18340104) and Kyoto-Advanced Nano technology Network from MEXT, Japan. ",

year = "2009",

month = may,

doi = "10.1016/j.orgel.2009.01.006",

language = "English",

volume = "10",

pages = "432--436",

journal = "Organic Electronics",

issn = "1566-1199",

publisher = "Elsevier",

number = "3",

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T1 - High-performance C60 and picene thin film field-effect transistors with conducting polymer electrodes in bottom contact structure

AU - Kaji, Yumiko

AU - Mitsuhashi, Ryoji

AU - Lee, Xuesong

AU - Okamoto, Hideki

AU - Kambe, Takashi

AU - Ikeda, Naoshi

AU - Fujiwara, Akihiko

AU - Yamaji, Minoru

AU - Omote, Kenji

AU - Kubozono, Yoshihiro

N1 - Funding Information: The authors appreciate to Naoko Kawaski for her helpful assistance. This work was partly supported by a Grant-in-Aid (18340104) and Kyoto-Advanced Nano technology Network from MEXT, Japan.

PY - 2009/5

Y1 - 2009/5

N2 - C60 and picene thin film field-effect transistors (FETs) in bottom contact structure have been fabricated with poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) electrodes for a realization of mechanical flexible organic FETs. The C60 thin film FETs showed n-channel enhancement-type characteristics with the field-effect mobility μ value of 0.41 cm2 V-1 s-1, while the picene thin film FET showed p-channel enhancement-type characteristics with the μ of 0.61 cm2 V-1 s-1. The μ values recorded for C60 and picene thin film FETs are comparable to those for C60 and picene thin film FETs with Au electrodes.

AB - C60 and picene thin film field-effect transistors (FETs) in bottom contact structure have been fabricated with poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) electrodes for a realization of mechanical flexible organic FETs. The C60 thin film FETs showed n-channel enhancement-type characteristics with the field-effect mobility μ value of 0.41 cm2 V-1 s-1, while the picene thin film FET showed p-channel enhancement-type characteristics with the μ of 0.61 cm2 V-1 s-1. The μ values recorded for C60 and picene thin film FETs are comparable to those for C60 and picene thin film FETs with Au electrodes.

KW - Bottom contact structure

KW - C

KW - Conducting polymer electrodes

KW - Organic thin film transistors

KW - Picene

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