Abstract
Using X-ray and DAC, room-temperature crystal structures under physical pressure(PP) were solved for DCNQI-Cu compounds which exhibit particular metal-insulator(M-I) transition owing to their electronic low dimensionality(CDW) and strong correlation(Mott). This M-I transition is known to be triggered with moderate(=small) PP or chemical substitution(chemical pressure:CP). Observed high pressure structures were compared with theoretical structure determinations. From the structural viewpoint, relation between PP and CP effects on the M-I transition was discussed, [organic conductor, metal-insulator transition, charge density wave, Mott transition, X-ray diffraction].
| Original language | English |
|---|---|
| Pages (from-to) | 404-406 |
| Number of pages | 3 |
| Journal | Review of High Pressure Science and Technology/Koatsuryoku No Kagaku To Gijutsu |
| Volume | 7 |
| DOIs | |
| Publication status | Published - 1998 |
ASJC Scopus subject areas
- General Chemistry
- General Materials Science
- Condensed Matter Physics
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