High-resolution angle-resolved photoemission study of layered transition-metal dichalcogenides Nb1-xTixXc2 (Xc = S, Se, Te)

T. Sato, H. Komatsu, K. Terashima, T. Takahashi, M. Shimakawa, K. Hayashi

    Research output: Contribution to journalArticlepeer-review

    2 Citations (Scopus)

    Abstract

    High-resolution angle-resolved photoemission spectroscopy (ARPES) has been performed on Nb1-xTixXc2 (Xc = S, Se, Te) to elucidate the change in the band structure as a function of x and Xc. We found that spectral intensity near EF of S- and Se-based compounds is remarkably suppressed, suggesting the strong scattering of electrons by the substitution of transition metals. In contrast, Te-based compound shows a clear Fermi edge. We discuss the origin of metal-semiconductor transition in terms of the strength of hybridization between chalcogen p band and transition metal d band.

    Original languageEnglish
    Pages (from-to)633-637
    Number of pages5
    JournalJournal of Electron Spectroscopy and Related Phenomena
    Volume144-147
    DOIs
    Publication statusPublished - Jun 2005

    Keywords

    • Photoemission
    • Transition metal dichalcogenides

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Radiation
    • Atomic and Molecular Physics, and Optics
    • Condensed Matter Physics
    • Spectroscopy
    • Physical and Theoretical Chemistry

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