Abstract
A high-speed and high-output-peak-voltage edge-illuminated refracting-facet photodiode has been developed by employing a thin absorption layer. The fabricated RFPD shows a responsivity as high as 0.69 A/W even with an absorption layer as thin as 0.43 μm, a maximum 3 dB bandwidth of 66 GHz, and a high-output peak voltage of > 2.5V.
| Original language | English |
|---|---|
| Pages (from-to) | 1581-1582 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 35 |
| Issue number | 18 |
| DOIs | |
| Publication status | Published - Sept 2 1999 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering