High-speed electroabsorption modulators using ruthenium-doped SI-InP: Impact of interdiffusion-free burying technology on E/O modulation characteristics

Munehisa Tamura; Takayuki Yamanaka; Hideki Fukano; Yuichi Akage; Yasuhiro Kondo; Tadashi Saitoh

High-speed electroabsorption modulators using ruthenium-doped SI-InP: Impact of interdiffusion-free burying technology on E/O modulation characteristics

Munehisa Tamura, Takayuki Yamanaka, Hideki Fukano, Yuichi Akage, Yasuhiro Kondo, Tadashi Saitoh

Research output: Contribution to journal › Conference article › peer-review

Abstract

InGaAlAs/InAlAs electroabsorption (EA) are successfully fabricated modulators using ruthenium (Ru)-doped semi-insulating (SI)-InP burying technology. A comparison between measured and calculated microwave characteristics reveals that no additional microwave loss due to Zn diffusion occurred because of the use of Ru-doped SI-InP layers. A small-signal E/O response with a -3 dB electrical bandwidth of over 50 GHz is demonstrated.

Original language	English
Pages (from-to)	491-494
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication status	Published - Jul 25 2003
Externally published	Yes
Event	2003 International Conference Indium Phosphide and Related Materials - Santa Barbara, CA, United States Duration: May 12 2003 → May 16 2003

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

High-speed electroabsorption modulators using ruthenium-doped SI-InP: Impact of interdiffusion-free burying technology on E/O modulation characteristics. / Tamura, Munehisa; Yamanaka, Takayuki; Fukano, Hideki et al.
In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 25.07.2003, p. 491-494.

Research output: Contribution to journal › Conference article › peer-review

@article{45eb643328ab45ceb38e0a695690c74f,

title = "High-speed electroabsorption modulators using ruthenium-doped SI-InP: Impact of interdiffusion-free burying technology on E/O modulation characteristics",

abstract = "InGaAlAs/InAlAs electroabsorption (EA) are successfully fabricated modulators using ruthenium (Ru)-doped semi-insulating (SI)-InP burying technology. A comparison between measured and calculated microwave characteristics reveals that no additional microwave loss due to Zn diffusion occurred because of the use of Ru-doped SI-InP layers. A small-signal E/O response with a -3 dB electrical bandwidth of over 50 GHz is demonstrated.",

author = "Munehisa Tamura and Takayuki Yamanaka and Hideki Fukano and Yuichi Akage and Yasuhiro Kondo and Tadashi Saitoh",

year = "2003",

month = jul,

day = "25",

language = "English",

pages = "491--494",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2003 International Conference Indium Phosphide and Related Materials ; Conference date: 12-05-2003 Through 16-05-2003",

}

TY - JOUR

T1 - High-speed electroabsorption modulators using ruthenium-doped SI-InP

T2 - 2003 International Conference Indium Phosphide and Related Materials

AU - Tamura, Munehisa

AU - Yamanaka, Takayuki

AU - Fukano, Hideki

AU - Akage, Yuichi

AU - Kondo, Yasuhiro

AU - Saitoh, Tadashi

PY - 2003/7/25

Y1 - 2003/7/25

N2 - InGaAlAs/InAlAs electroabsorption (EA) are successfully fabricated modulators using ruthenium (Ru)-doped semi-insulating (SI)-InP burying technology. A comparison between measured and calculated microwave characteristics reveals that no additional microwave loss due to Zn diffusion occurred because of the use of Ru-doped SI-InP layers. A small-signal E/O response with a -3 dB electrical bandwidth of over 50 GHz is demonstrated.

AB - InGaAlAs/InAlAs electroabsorption (EA) are successfully fabricated modulators using ruthenium (Ru)-doped semi-insulating (SI)-InP burying technology. A comparison between measured and calculated microwave characteristics reveals that no additional microwave loss due to Zn diffusion occurred because of the use of Ru-doped SI-InP layers. A small-signal E/O response with a -3 dB electrical bandwidth of over 50 GHz is demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=0038825115&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038825115&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0038825115

SN - 1092-8669

SP - 491

EP - 494

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Y2 - 12 May 2003 through 16 May 2003

ER -

High-speed electroabsorption modulators using ruthenium-doped SI-InP: Impact of interdiffusion-free burying technology on E/O modulation characteristics

Abstract

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this