@inproceedings{a6cbf8bd00dc45f3801292cba58fd17a,
title = "High-speed InP/InGaAs heterojunction phototransistor with emitter metal reflector",
abstract = "This paper reports the characteristics of InP/InGaAs heterojunction phototransistors (HPTs) in which light is incident through the substrate. These HPTs have a base terminal and a non-alloyed emitter metal reflector that increases the quantum efficiency to 37% regardless of the thin base and collector light-absorbing layers. An optical gain of more than 70 and an optical gain cutoff frequency (fc) of 22 GHz are obtained at the 3×3 μm2 emitter HPT. This HPT has the capability of operating as a high speed heterojunction bipolar transistor (HBT) at the same time. A current gain cutoff frequency (fT) of 128 GHz is obtained for HBTs fabricated on the same wafer.",
author = "H. Fukano and T. Kobayashi and Y. Takanashi and M. Fujimoto",
year = "1993",
language = "English",
isbn = "0780314506",
series = "Technical Digest - International Electron Devices Meeting",
publisher = "Publ by IEEE",
pages = "213--216",
editor = "Anon",
booktitle = "Technical Digest - International Electron Devices Meeting",
note = "Proceedings of the 1993 IEEE International Electron Devices Meeting ; Conference date: 05-12-1993 Through 08-12-1993",
}