TY - GEN
T1 - High-temperature thermoelectric properties of delafossite oxide CuRh 1-xMgxO2
AU - Kuriyama, H.
AU - Nohara, M.
AU - Sasagawa, T.
AU - Takubo, K.
AU - Mizokawa, T.
AU - Kimura, K.
AU - Takagi, H.
PY - 2006/12/1
Y1 - 2006/12/1
N2 - We report high temperature thermoelectric properties of doped delafossite oxide CuRh0.9Mg0.1O2. The parent compound CuRhO2 is a band insulator and becomes metallic upon Mg doping for Rh. We found that polycrystalline CuRh0.9Mg0.1O 2 shows a large thermoelectric power S ∼ +270 μV/K despite its low resistivity ∼ 6 mΩcm at high temperatures around 1000 K. Combining these with a thermal conductivity κ ∼ 80 mW/cm K, we estimate a large dimensionless figure of merit ZT ∼ 0.15 at 1000 K.
AB - We report high temperature thermoelectric properties of doped delafossite oxide CuRh0.9Mg0.1O2. The parent compound CuRhO2 is a band insulator and becomes metallic upon Mg doping for Rh. We found that polycrystalline CuRh0.9Mg0.1O 2 shows a large thermoelectric power S ∼ +270 μV/K despite its low resistivity ∼ 6 mΩcm at high temperatures around 1000 K. Combining these with a thermal conductivity κ ∼ 80 mW/cm K, we estimate a large dimensionless figure of merit ZT ∼ 0.15 at 1000 K.
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U2 - 10.1109/ICT.2006.331289
DO - 10.1109/ICT.2006.331289
M3 - Conference contribution
AN - SCOPUS:46149121796
SN - 1424408105
SN - 9781424408108
T3 - International Conference on Thermoelectrics, ICT, Proceedings
SP - 97
EP - 98
BT - Proceedings ICT'06 - 25th International Conference on Thermoelectrics
T2 - ICT'06 - 25th International Conference on Thermoelectrics
Y2 - 6 August 2006 through 10 August 2006
ER -