TY - JOUR
T1 - Highly reduced anatase TiO2-δ thin films obtained via low-temperature reduction
AU - Kitada, Atsushi
AU - Kasahara, Shigeru
AU - Terashima, Takahito
AU - Yoshimura, Kazuyoshi
AU - Kobayashi, Yoji
AU - Kageyama, Hiroshi
PY - 2011/3
Y1 - 2011/3
N2 - We report the preparation and physical properties of reduced anatase TiO2-δ thin films obtained via a low-temperature (low-T) reduction using CaH2. The oxygen amounts were controlled in a wider range than ever reported. Some highly reduced anatase films showed resistivities as low as 10-3 ωcm at room temperature, both in metallic and semiconducting states. The most conducting metallic sample has very high carrier concentration of 1:6 × 1021 cm-3, comparable with those of metal-doped anatase films. Moreover, the magnetoresistance of the films changed its sign twice as a function of δ.
AB - We report the preparation and physical properties of reduced anatase TiO2-δ thin films obtained via a low-temperature (low-T) reduction using CaH2. The oxygen amounts were controlled in a wider range than ever reported. Some highly reduced anatase films showed resistivities as low as 10-3 ωcm at room temperature, both in metallic and semiconducting states. The most conducting metallic sample has very high carrier concentration of 1:6 × 1021 cm-3, comparable with those of metal-doped anatase films. Moreover, the magnetoresistance of the films changed its sign twice as a function of δ.
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U2 - 10.1143/APEX.4.035801
DO - 10.1143/APEX.4.035801
M3 - Article
AN - SCOPUS:79952531250
SN - 1882-0778
VL - 4
JO - Applied Physics Express
JF - Applied Physics Express
IS - 3
M1 - 035801
ER -