Highly reliable uni-travelling-carrier photodiodes for 40 Gbit/s optical transmission systems

T. Furuta; H. Fushimi; T. Yasui; Y. Muramoto; H. Kamioka; H. Mawatari; H. Fukano; T. Ishibashi; H. Ito

doi:10.1049/el:20020213

Highly reliable uni-travelling-carrier photodiodes for 40 Gbit/s optical transmission systems

T. Furuta, H. Fushimi, T. Yasui, Y. Muramoto, H. Kamioka, H. Mawatari, H. Fukano, T. Ishibashi, H. Ito

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

The reliability of InP/InGaAs uni-travelling-carrier photodiodes has been studied. A failure rate of 42 FIT at 25°C was estimated from long-term bias-temperature stress tests. Stable operations for over 2000 h were also confirmed under higher-power optical input conditions.

Original language	English
Pages (from-to)	332-334
Number of pages	3
Journal	Electronics Letters
Volume	38
Issue number	7
DOIs	https://doi.org/10.1049/el:20020213
Publication status	Published - Mar 28 2002
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:20020213

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abstract = "The reliability of InP/InGaAs uni-travelling-carrier photodiodes has been studied. A failure rate of 42 FIT at 25°C was estimated from long-term bias-temperature stress tests. Stable operations for over 2000 h were also confirmed under higher-power optical input conditions.",

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AU - Furuta, T.

AU - Fushimi, H.

AU - Yasui, T.

AU - Muramoto, Y.

AU - Kamioka, H.

AU - Mawatari, H.

AU - Fukano, H.

AU - Ishibashi, T.

AU - Ito, H.

PY - 2002/3/28

Y1 - 2002/3/28

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AB - The reliability of InP/InGaAs uni-travelling-carrier photodiodes has been studied. A failure rate of 42 FIT at 25°C was estimated from long-term bias-temperature stress tests. Stable operations for over 2000 h were also confirmed under higher-power optical input conditions.

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Highly reliable uni-travelling-carrier photodiodes for 40 Gbit/s optical transmission systems

Abstract

ASJC Scopus subject areas

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