Hole-injection barrier in pentacene field-effect transistor with Au electrodes modified by C16H33SH

Naoko Kawasaki; Yohei Ohta; Yoshihiro Kubozono; Akihiko Fujiwara

doi:10.1063/1.2789699

Hole-injection barrier in pentacene field-effect transistor with Au electrodes modified by C₁₆H₃₃SH

Naoko Kawasaki, Yohei Ohta, Yoshihiro Kubozono, Akihiko Fujiwara

Research Institute for Interdisciplinary Science

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

Field-effect transistor with thin films of pentacene has been fabricated with Au electrodes modified by 1-hexadecanethiol (C16 H33 SH), and the hole-injection barriers have been determined from the temperature dependence of output properties on the basis of the thermionic emission model for double Schottky barriers. The large tunneling barriers are formed by the insulating C16 H33 SH at the interfaces between the Au electrodes and pentacene thin films.

Original language	English
Article number	123518
Journal	Applied Physics Letters
Volume	91
Issue number	12
DOIs	https://doi.org/10.1063/1.2789699
Publication status	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2789699

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title = "Hole-injection barrier in pentacene field-effect transistor with Au electrodes modified by C16H33SH",

abstract = "Field-effect transistor with thin films of pentacene has been fabricated with Au electrodes modified by 1-hexadecanethiol (C16 H33 SH), and the hole-injection barriers have been determined from the temperature dependence of output properties on the basis of the thermionic emission model for double Schottky barriers. The large tunneling barriers are formed by the insulating C16 H33 SH at the interfaces between the Au electrodes and pentacene thin films.",

author = "Naoko Kawasaki and Yohei Ohta and Yoshihiro Kubozono and Akihiko Fujiwara",

note = "Funding Information: This study was partly supported by a Grant-in-Aid (18340104) from MEXT, Japan.",

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journal = "Applied Physics Letters",

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AU - Kawasaki, Naoko

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AU - Kubozono, Yoshihiro

AU - Fujiwara, Akihiko

N1 - Funding Information: This study was partly supported by a Grant-in-Aid (18340104) from MEXT, Japan.

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AB - Field-effect transistor with thin films of pentacene has been fabricated with Au electrodes modified by 1-hexadecanethiol (C16 H33 SH), and the hole-injection barriers have been determined from the temperature dependence of output properties on the basis of the thermionic emission model for double Schottky barriers. The large tunneling barriers are formed by the insulating C16 H33 SH at the interfaces between the Au electrodes and pentacene thin films.

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Hole-injection barrier in pentacene field-effect transistor with Au electrodes modified by C₁₆H₃₃SH

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