TY - GEN
T1 - Hydrogen response mechanism of a proton pumping gate FET gas sensor
AU - Tsukada, Keiji
AU - Yamaguchi, Tomiharu
AU - Kiwa, Toshihiko
AU - Yamada, Hironobu
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2007
Y1 - 2007
N2 - We developed a new type hydrogen sensor for a proton pumping gate FET with a triple layer of Pd / proton conducting polymer / Pt. Compared with conventional type FET with a single catalytic metal gate, the selectivity was improved. Furthermore, two different output signals of DC and AC modulation were obtained. According to increments of the upper gate voltage to a lower gate, the sensitivity was increased. When modulation voltage was added to the upper gate voltage, AC modulation output was obtained. The response mechanism of the new type FET was investigated using several hydrogen gases and with modulation conditions. Consequently, the hydrogen response mechanism can be explained by a hydrogen dissociation reaction occurring at the upper gate, and the hydrogen gas and generated proton can pass through the proton conducting polymer, and finally an equilibrium hydrogen reaction occurs at the lower gate. These complex mechanisms can be controlled by the gate bias and modulation voltage.
AB - We developed a new type hydrogen sensor for a proton pumping gate FET with a triple layer of Pd / proton conducting polymer / Pt. Compared with conventional type FET with a single catalytic metal gate, the selectivity was improved. Furthermore, two different output signals of DC and AC modulation were obtained. According to increments of the upper gate voltage to a lower gate, the sensitivity was increased. When modulation voltage was added to the upper gate voltage, AC modulation output was obtained. The response mechanism of the new type FET was investigated using several hydrogen gases and with modulation conditions. Consequently, the hydrogen response mechanism can be explained by a hydrogen dissociation reaction occurring at the upper gate, and the hydrogen gas and generated proton can pass through the proton conducting polymer, and finally an equilibrium hydrogen reaction occurs at the lower gate. These complex mechanisms can be controlled by the gate bias and modulation voltage.
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U2 - 10.1109/ICSENS.2007.4388655
DO - 10.1109/ICSENS.2007.4388655
M3 - Conference contribution
AN - SCOPUS:48349147887
SN - 1424412617
SN - 9781424412617
T3 - Proceedings of IEEE Sensors
SP - 1326
EP - 1329
BT - The 6th IEEE Conference on SENSORS, IEEE SENSORS 2007
T2 - 6th IEEE Conference on SENSORS, IEEE SENSORS 2007
Y2 - 28 October 2007 through 31 October 2007
ER -