In-Ga-Zn oxide nanoparticles acting as an oxide semiconductor material synthesized via a coprecipitation-based method

Indium-gallium-zinc oxide (IGZO) nanoparticles that can act as an oxide semiconductor were successfully synthesized using a coprecipitation method via the hydrolysis of urea in aqueous media containing ethylene glycol. The resulting IGZO precursor nanoparticles contain crystalline indium hydroxide and zinc-gallium carbonate. Sintering the precursor nanoparticles at temperatures higher than 300 °C provides amorphous IGZO nanoparticles, while poly-crystalline IGZO nanoparticles are obtained at temperatures above 700 °C. Poly-crystalline IGZO ink was prepared using the IGZO nanoparticles for the fabrication of a thin film transistor (TFT). Annealing at temperatures higher than 400 °C for 30 min gives the desired TFT switching properties due to the removal of the organic fraction contained in the ink.