TY - JOUR
T1 - Incorporation Site and Valence State of Sn Atoms in Sn-Substituted La(O,F)BiS2 Superconductor
AU - Li, Ya Jun
AU - Sun, Ze Xu
AU - Kataoka, Noriyuki
AU - Setoguchi, Taro
AU - Hashimoto, Yusuke
AU - Takeuchi, Soichiro
AU - Koga, Shunjo
AU - Muro, Takayuki
AU - Demura, Satoshi
AU - Noguchi, Kanako
AU - Sakata, Hideaki
AU - Matsushita, Tomohiro
AU - Kawasaki, Ikuto
AU - Fujimori, Shin Ichi
AU - Wakita, Takanori
AU - Muraoka, Yuji
AU - Yokoya, Takayoshi
N1 - Funding Information:
Acknowledgements Experiments at SPring-8 were performed under proposal numbers 2018B3844, 2020A0734, 2020A1598, 2021A3845, 2021B1027, and 2021B3845. Part of this work was supported by the JAEA Advanced Characterization Nanotechnology Platform under the “Nanotechnology Platform” of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan (Grant Nos. JPMXP09A21AE23 and JPMXP09A21BE23). This work was partially supported by JSPS KAKENHI Grant Numbers (JP18KK0076, JP20K20522, and JP20H05882) from MEXT, and by the Program for Promoting the Enhancement of Research Universities.
Publisher Copyright:
© 2022 The Physical Society of Japan
PY - 2022/5/15
Y1 - 2022/5/15
N2 - BiS2-based superconductors have attracted considerable attention owing to the possible occurrence of exotic superconductivity. Recently, the superconducting critical temperature (Tc) of La(O,F)BiS2 has been reported to be enhanced with Pb or Sn doping. In this study, we have performed photoelectron holography (PEH) and core-level photoelectron spectroscopy (PES) to clarify the substituted site and valence state of Sn atoms in Sn-substituted La(O,F)BiS2. The PEH study revealed that the Sn atoms are incorporated into the Bi sites. A core-level PES study suggested that the valence state of the substituted Sn atoms is close to that of Sn2+, indicating that the Sn dopants provide hole carriers that compensate the electron carriers introduced by the F doping. These results are fundamental information for understanding the impact of Sn doping on this compound.
AB - BiS2-based superconductors have attracted considerable attention owing to the possible occurrence of exotic superconductivity. Recently, the superconducting critical temperature (Tc) of La(O,F)BiS2 has been reported to be enhanced with Pb or Sn doping. In this study, we have performed photoelectron holography (PEH) and core-level photoelectron spectroscopy (PES) to clarify the substituted site and valence state of Sn atoms in Sn-substituted La(O,F)BiS2. The PEH study revealed that the Sn atoms are incorporated into the Bi sites. A core-level PES study suggested that the valence state of the substituted Sn atoms is close to that of Sn2+, indicating that the Sn dopants provide hole carriers that compensate the electron carriers introduced by the F doping. These results are fundamental information for understanding the impact of Sn doping on this compound.
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U2 - 10.7566/JPSJ.91.054602
DO - 10.7566/JPSJ.91.054602
M3 - Article
AN - SCOPUS:85129640764
SN - 0031-9015
VL - 91
JO - Journal of the Physical Society of Japan
JF - Journal of the Physical Society of Japan
IS - 5
M1 - 054602
ER -