Interplane resistivity of isovalent doped BaFe₂(As _1-xP_x)₂

Temperature-dependent interplane resistivity ρ_c(T) was measured for the iron-based superconductor BaFe₂(As _1-xP_x)₂ over a broad isoelectron phosphorus substitution range from x=0 to x=0.60, from nonsuperconducting parent compound to heavily overdoped superconducting composition with T_c≈10K. The features due to structural and magnetic transitions are clearly resolved in ρ_c(T) of the underdoped crystals. A characteristic maximum in ρ_c(T), found in the parent BaFe₂As₂ at around 200 K, moves rapidly with phosphorus substitution to high temperatures. At the optimal doping, the interplane resistivity shows T-linear temperature dependence without any crossover anomalies, similar to the previously reported in-plane resistivity. This observation is in stark contrast with dissimilar temperature dependencies found at optimal doping in electron-doped Ba(Fe _1-xCo_x)₂As₂. Our finding suggests that despite similar values of the resistivity and its anisotropy, the temperature-dependent transport in the normal state is very different in electron and isoelectron-doped compounds. Similar temperature dependence of both in-plane and interplane resistivities, in which the dominant contributions are coming from different parts of the Fermi surface, suggests that scattering is the same on the whole Fermi surface. Since magnetic fluctuations are expected to be much stronger on the quasinested sheets, this observation may point to the importance of the interorbital scattering between different sheets.