La-doped EuO: A rare earth ferromagnetic semiconductor with the highest Curie temperature

H. Miyazaki, H. J. Im, K. Terashima, S. Yagi, M. Kato, K. Soda, T. Ito, S. Kimura

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    55 Citations (Scopus)

    Abstract

    We report the fabrication of single-crystalline La-doped EuO thin films with a Curie temperature (TC) of about 200 K, the highest among rare-earth compounds without transition metals. From first-principle band calculation and x-ray diffraction measurement, the observed increase in T C cannot be explained only by the increase in hybridization intensity due to lattice contraction and the increase in up-spin electrons of the Eu 5d state caused by the electron doping. Hybridization between the Eu 4f and donor states and/or Ruderman-Kittel-Kasuya-Yoshida interaction mediated by the doped La 5d state is a possible origin of the increase in TC.

    Original languageEnglish
    Article number232503
    JournalApplied Physics Letters
    Volume96
    Issue number23
    DOIs
    Publication statusPublished - 2010

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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