Laser ablation thresholds of silicon for different pulse durations: Theory and experiment

Harald O. Jeschke; Martin E. Garcia; Matthias Lenzner; Jörn Bonse; Jörg Krüger; Wolfgang Kautek

doi:10.1016/S0169-4332(02)00458-0

Laser ablation thresholds of silicon for different pulse durations: Theory and experiment

Harald O. Jeschke, Martin E. Garcia, Matthias Lenzner, Jörn Bonse, Jörg Krüger, Wolfgang Kautek

Research output: Contribution to journal › Conference article › peer-review

138 Citations (Scopus)

Abstract

The ultrafast laser ablation of silicon has been investigated experimentally and theoretically. The theoretical description is based on molecular dynamics (MD) simulations combined with a microscopic electronic model. We determine the thresholds of melting and ablation for two different pulse durations τ = 20 and 500 fs. Experiments have been performed using 100 Ti:Sap-phire laser pulses per spot in air environment. The ablation thresholds were determined for pulses with a duration of 25 and 400fs, respectively. Good agreement is obtained between theory and experiment.

Original language	English
Pages (from-to)	839-844
Number of pages	6
Journal	Applied Surface Science
Volume	197-198
DOIs	https://doi.org/10.1016/S0169-4332(02)00458-0
Publication status	Published - Jan 1 2002
Externally published	Yes
Event	Cola 2001 - Tsukuba, Japan Duration: Oct 1 2001 → Oct 1 2001

Keywords

Laser ablation
Pulse duration
Threshold of silicon

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/S0169-4332(02)00458-0

Cite this

@article{fb2cc8d08ae444aaab827e6f2cf9d7a6,

title = "Laser ablation thresholds of silicon for different pulse durations: Theory and experiment",

abstract = "The ultrafast laser ablation of silicon has been investigated experimentally and theoretically. The theoretical description is based on molecular dynamics (MD) simulations combined with a microscopic electronic model. We determine the thresholds of melting and ablation for two different pulse durations τ = 20 and 500 fs. Experiments have been performed using 100 Ti:Sap-phire laser pulses per spot in air environment. The ablation thresholds were determined for pulses with a duration of 25 and 400fs, respectively. Good agreement is obtained between theory and experiment.",

keywords = "Laser ablation, Pulse duration, Threshold of silicon",

author = "Jeschke, {Harald O.} and Garcia, {Martin E.} and Matthias Lenzner and J{\"o}rn Bonse and J{\"o}rg Kr{\"u}ger and Wolfgang Kautek",

year = "2002",

month = jan,

day = "1",

doi = "10.1016/S0169-4332(02)00458-0",

language = "English",

volume = "197-198",

pages = "839--844",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

note = "Cola 2001 ; Conference date: 01-10-2001 Through 01-10-2001",

}

TY - JOUR

T1 - Laser ablation thresholds of silicon for different pulse durations

T2 - Cola 2001

AU - Jeschke, Harald O.

AU - Garcia, Martin E.

AU - Lenzner, Matthias

AU - Bonse, Jörn

AU - Krüger, Jörg

AU - Kautek, Wolfgang

PY - 2002/1/1

Y1 - 2002/1/1

N2 - The ultrafast laser ablation of silicon has been investigated experimentally and theoretically. The theoretical description is based on molecular dynamics (MD) simulations combined with a microscopic electronic model. We determine the thresholds of melting and ablation for two different pulse durations τ = 20 and 500 fs. Experiments have been performed using 100 Ti:Sap-phire laser pulses per spot in air environment. The ablation thresholds were determined for pulses with a duration of 25 and 400fs, respectively. Good agreement is obtained between theory and experiment.

AB - The ultrafast laser ablation of silicon has been investigated experimentally and theoretically. The theoretical description is based on molecular dynamics (MD) simulations combined with a microscopic electronic model. We determine the thresholds of melting and ablation for two different pulse durations τ = 20 and 500 fs. Experiments have been performed using 100 Ti:Sap-phire laser pulses per spot in air environment. The ablation thresholds were determined for pulses with a duration of 25 and 400fs, respectively. Good agreement is obtained between theory and experiment.

KW - Laser ablation

KW - Pulse duration

KW - Threshold of silicon

UR - http://www.scopus.com/inward/record.url?scp=0036423947&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036423947&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(02)00458-0

DO - 10.1016/S0169-4332(02)00458-0

M3 - Conference article

AN - SCOPUS:0036423947

SN - 0169-4332

VL - 197-198

SP - 839

EP - 844

JO - Applied Surface Science

JF - Applied Surface Science

Y2 - 1 October 2001 through 1 October 2001

ER -

Laser ablation thresholds of silicon for different pulse durations: Theory and experiment

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this