Laser ablation thresholds of silicon for different pulse durations: Theory and experiment

Harald O. Jeschke, Martin E. Garcia, Matthias Lenzner, Jörn Bonse, Jörg Krüger, Wolfgang Kautek

Research output: Contribution to journalConference articlepeer-review

138 Citations (Scopus)


The ultrafast laser ablation of silicon has been investigated experimentally and theoretically. The theoretical description is based on molecular dynamics (MD) simulations combined with a microscopic electronic model. We determine the thresholds of melting and ablation for two different pulse durations τ = 20 and 500 fs. Experiments have been performed using 100 Ti:Sap-phire laser pulses per spot in air environment. The ablation thresholds were determined for pulses with a duration of 25 and 400fs, respectively. Good agreement is obtained between theory and experiment.

Original languageEnglish
Pages (from-to)839-844
Number of pages6
JournalApplied Surface Science
Publication statusPublished - Jan 1 2002
Externally publishedYes
EventCola 2001 - Tsukuba, Japan
Duration: Oct 1 2001Oct 1 2001


  • Laser ablation
  • Pulse duration
  • Threshold of silicon

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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