Abstract
A laser terahertz emission system is proposed to investigate the catalytic metal/semiconductor interfaces of hydrogen sensors. Samples were fabricated by depositing a catalytic metal thin film on a semi-insulating silicon substrate. A femtosecond laser was used to radiate terahertz waves from the sample in a gas cell filled with a hydrogen and nitrogen gas mixture. The peak amplitude of the terahertz waves decreased with increasing hydrogen concentration. We also fabricated a metal-oxide-semiconductor field effect transistor hydrogen sensor, and compared its properties with the terahertz radiation properties. These results suggest that the laser terahertz emission system is a potential tool to investigate catalytic metal/semiconductor interfaces.
Original language | English |
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Article number | 261102 |
Pages (from-to) | 1-3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 86 |
Issue number | 26 |
DOIs | |
Publication status | Published - Jun 27 2005 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)