Linear electro-optic effect in ferroelectric HfO2-based epitaxial thin films

Shinya Kondo; Reijiro Shimura; Takashi Teranishi; Akira Kishimoto; Takanori Nagasaki; Hiroshi Funakubo; Tomoaki Yamada

doi:10.35848/1347-4065/ac087d

Linear electro-optic effect in ferroelectric HfO2-based epitaxial thin films

Shinya Kondo, Reijiro Shimura, Takashi Teranishi, Akira Kishimoto, Takanori Nagasaki, Hiroshi Funakubo, Tomoaki Yamada

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Electro-optic (EO) modulators for silicon photonics using CMOS-compatible materials and processes are in great demand. In this study, epitaxial (100)-undoped HfO2 and Y-doped HfO2 thin films were fabricated on Sn-doped In2O3/yttria-stabilized zirconia(100) substrates at room temperature via magnetron sputtering. EO measurement of the Y-HfO2 film using modulation ellipsometry showed that the phase was changed by 180° after application of positive and negative poling biases, and the modulation amplitude increased linearly with increasing AC electric field, indicating a linear EO effect based on ferroelectricity. The observed results indicate that ferroelectric HfO2-based films are viable candidates for CMOScompatible EO devices.

Original language	English
Article number	070905
Journal	Japanese Journal of Applied Physics
Volume	60
Issue number	7
DOIs	https://doi.org/10.35848/1347-4065/ac087d
Publication status	Published - Jul 2021

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Linear electro-optic effect in ferroelectric HfO2-based epitaxial thin films",

abstract = "Electro-optic (EO) modulators for silicon photonics using CMOS-compatible materials and processes are in great demand. In this study, epitaxial (100)-undoped HfO2 and Y-doped HfO2 thin films were fabricated on Sn-doped In2O3/yttria-stabilized zirconia(100) substrates at room temperature via magnetron sputtering. EO measurement of the Y-HfO2 film using modulation ellipsometry showed that the phase was changed by 180° after application of positive and negative poling biases, and the modulation amplitude increased linearly with increasing AC electric field, indicating a linear EO effect based on ferroelectricity. The observed results indicate that ferroelectric HfO2-based films are viable candidates for CMOScompatible EO devices. ",

author = "Shinya Kondo and Reijiro Shimura and Takashi Teranishi and Akira Kishimoto and Takanori Nagasaki and Hiroshi Funakubo and Tomoaki Yamada",

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T1 - Linear electro-optic effect in ferroelectric HfO2-based epitaxial thin films

AU - Kondo, Shinya

AU - Shimura, Reijiro

AU - Teranishi, Takashi

AU - Kishimoto, Akira

AU - Nagasaki, Takanori

AU - Funakubo, Hiroshi

AU - Yamada, Tomoaki

PY - 2021/7

Y1 - 2021/7

N2 - Electro-optic (EO) modulators for silicon photonics using CMOS-compatible materials and processes are in great demand. In this study, epitaxial (100)-undoped HfO2 and Y-doped HfO2 thin films were fabricated on Sn-doped In2O3/yttria-stabilized zirconia(100) substrates at room temperature via magnetron sputtering. EO measurement of the Y-HfO2 film using modulation ellipsometry showed that the phase was changed by 180° after application of positive and negative poling biases, and the modulation amplitude increased linearly with increasing AC electric field, indicating a linear EO effect based on ferroelectricity. The observed results indicate that ferroelectric HfO2-based films are viable candidates for CMOScompatible EO devices.

AB - Electro-optic (EO) modulators for silicon photonics using CMOS-compatible materials and processes are in great demand. In this study, epitaxial (100)-undoped HfO2 and Y-doped HfO2 thin films were fabricated on Sn-doped In2O3/yttria-stabilized zirconia(100) substrates at room temperature via magnetron sputtering. EO measurement of the Y-HfO2 film using modulation ellipsometry showed that the phase was changed by 180° after application of positive and negative poling biases, and the modulation amplitude increased linearly with increasing AC electric field, indicating a linear EO effect based on ferroelectricity. The observed results indicate that ferroelectric HfO2-based films are viable candidates for CMOScompatible EO devices.

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Linear electro-optic effect in ferroelectric HfO2-based epitaxial thin films

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