Linewidth fluctuations caused by polymer aggregates in resist films

Toru Yamaguchi, Hideo Namatsu, Masao Nagase, Kenji Yamazaki, Kenji Kurihara

Research output: Contribution to journalArticlepeer-review


We investigate the linewidth fluctuation in resist patterns, which is a serious problem in electron beam nanolithography. Granular structures with a diameter of 20-30 nm have been observed in resist films. We have determined that these structures cause the linewidth fluctuations. The granules are made up of polymer aggregates. We discuss the origin of the aggregates from the point that their size depends on the polymer molecular weight. We also show that linewidth fluctuation is reduced when the pattern size is less than the aggregate size. The linewidth dependence of the linewidth fluctuation can be explained by the influence of the resist polymer aggregate on the development behavior.

Original languageEnglish
Pages (from-to)635-640
Number of pages6
JournalJournal of Photopolymer Science and Technology
Issue number4
Publication statusPublished - 1997


  • Electron beam nanolithography
  • Linewidth fluctuations
  • Polymer aggregates

ASJC Scopus subject areas

  • Polymers and Plastics
  • Organic Chemistry
  • Materials Chemistry


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