Linewidth fluctuations caused by polymer aggregates in resist films

Toru Yamaguchi; Hideo Namatsu; Masao Nagase; Kenji Yamazaki; Kenji Kurihara

doi:10.2494/photopolymer.10.635

Linewidth fluctuations caused by polymer aggregates in resist films

Toru Yamaguchi, Hideo Namatsu, Masao Nagase, Kenji Yamazaki, Kenji Kurihara

Faculty of Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We investigate the linewidth fluctuation in resist patterns, which is a serious problem in electron beam nanolithography. Granular structures with a diameter of 20-30 nm have been observed in resist films. We have determined that these structures cause the linewidth fluctuations. The granules are made up of polymer aggregates. We discuss the origin of the aggregates from the point that their size depends on the polymer molecular weight. We also show that linewidth fluctuation is reduced when the pattern size is less than the aggregate size. The linewidth dependence of the linewidth fluctuation can be explained by the influence of the resist polymer aggregate on the development behavior.

Original language	English
Pages (from-to)	635-640
Number of pages	6
Journal	Journal of Photopolymer Science and Technology
Volume	10
Issue number	4
DOIs	https://doi.org/10.2494/photopolymer.10.635
Publication status	Published - 1997

Keywords

Electron beam nanolithography
Linewidth fluctuations
Polymer aggregates

ASJC Scopus subject areas

Polymers and Plastics
Organic Chemistry
Materials Chemistry

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10.2494/photopolymer.10.635

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title = "Linewidth fluctuations caused by polymer aggregates in resist films",

abstract = "We investigate the linewidth fluctuation in resist patterns, which is a serious problem in electron beam nanolithography. Granular structures with a diameter of 20-30 nm have been observed in resist films. We have determined that these structures cause the linewidth fluctuations. The granules are made up of polymer aggregates. We discuss the origin of the aggregates from the point that their size depends on the polymer molecular weight. We also show that linewidth fluctuation is reduced when the pattern size is less than the aggregate size. The linewidth dependence of the linewidth fluctuation can be explained by the influence of the resist polymer aggregate on the development behavior.",

keywords = "Electron beam nanolithography, Linewidth fluctuations, Polymer aggregates",

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AU - Yamaguchi, Toru

AU - Namatsu, Hideo

AU - Nagase, Masao

AU - Yamazaki, Kenji

AU - Kurihara, Kenji

PY - 1997

Y1 - 1997

N2 - We investigate the linewidth fluctuation in resist patterns, which is a serious problem in electron beam nanolithography. Granular structures with a diameter of 20-30 nm have been observed in resist films. We have determined that these structures cause the linewidth fluctuations. The granules are made up of polymer aggregates. We discuss the origin of the aggregates from the point that their size depends on the polymer molecular weight. We also show that linewidth fluctuation is reduced when the pattern size is less than the aggregate size. The linewidth dependence of the linewidth fluctuation can be explained by the influence of the resist polymer aggregate on the development behavior.

AB - We investigate the linewidth fluctuation in resist patterns, which is a serious problem in electron beam nanolithography. Granular structures with a diameter of 20-30 nm have been observed in resist films. We have determined that these structures cause the linewidth fluctuations. The granules are made up of polymer aggregates. We discuss the origin of the aggregates from the point that their size depends on the polymer molecular weight. We also show that linewidth fluctuation is reduced when the pattern size is less than the aggregate size. The linewidth dependence of the linewidth fluctuation can be explained by the influence of the resist polymer aggregate on the development behavior.

KW - Electron beam nanolithography

KW - Linewidth fluctuations

KW - Polymer aggregates

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Linewidth fluctuations caused by polymer aggregates in resist films

Abstract

Keywords

ASJC Scopus subject areas

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