Low driving-voltage (1.1 Vpp) electroabsorption modulators operating at 40 Gbit/s

Hideki Fukano; Munehisa Tamura; Takayuki Yamanaka; Hiroki Nakajima; Yuichi Akage; Yasuhiro Kondo; Tadashi Saitoh

Low driving-voltage (1.1 Vpp) electroabsorption modulators operating at 40 Gbit/s

Hideki Fukano, Munehisa Tamura, Takayuki Yamanaka, Hiroki Nakajima, Yuichi Akage, Yasuhiro Kondo, Tadashi Saitoh

Research output: Contribution to journal › Conference article › peer-review

Abstract

40 Gbit/s InGaAlAs/InAlAs electroabsorption modulators driven by a Vpp as low as 1.1 V have been successfully fabricated. This low driving voltage is achieved by means of a sophisticated device design that optimizes the extinction and bandwidth.

Original language	English
Pages (from-to)	573-576
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication status	Published - Dec 1 2004
Externally published	Yes
Event	2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan Duration: May 31 2004 → Jun 4 2004

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "Low driving-voltage (1.1 Vpp) electroabsorption modulators operating at 40 Gbit/s",

abstract = "40 Gbit/s InGaAlAs/InAlAs electroabsorption modulators driven by a Vpp as low as 1.1 V have been successfully fabricated. This low driving voltage is achieved by means of a sophisticated device design that optimizes the extinction and bandwidth.",

author = "Hideki Fukano and Munehisa Tamura and Takayuki Yamanaka and Hiroki Nakajima and Yuichi Akage and Yasuhiro Kondo and Tadashi Saitoh",

year = "2004",

month = dec,

day = "1",

language = "English",

pages = "573--576",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

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note = "2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM ; Conference date: 31-05-2004 Through 04-06-2004",

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T1 - Low driving-voltage (1.1 Vpp) electroabsorption modulators operating at 40 Gbit/s

AU - Fukano, Hideki

AU - Tamura, Munehisa

AU - Yamanaka, Takayuki

AU - Nakajima, Hiroki

AU - Akage, Yuichi

AU - Kondo, Yasuhiro

AU - Saitoh, Tadashi

PY - 2004/12/1

Y1 - 2004/12/1

N2 - 40 Gbit/s InGaAlAs/InAlAs electroabsorption modulators driven by a Vpp as low as 1.1 V have been successfully fabricated. This low driving voltage is achieved by means of a sophisticated device design that optimizes the extinction and bandwidth.

AB - 40 Gbit/s InGaAlAs/InAlAs electroabsorption modulators driven by a Vpp as low as 1.1 V have been successfully fabricated. This low driving voltage is achieved by means of a sophisticated device design that optimizes the extinction and bandwidth.

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M3 - Conference article

AN - SCOPUS:23744517200

SN - 1092-8669

SP - 573

EP - 576

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

T2 - 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM

Y2 - 31 May 2004 through 4 June 2004

ER -

Low driving-voltage (1.1 Vpp) electroabsorption modulators operating at 40 Gbit/s

Abstract

ASJC Scopus subject areas

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