Low voltage operation in picene thin film field-effect transistor and its physical characteristics

Yumiko Kaji; Naoko Kawasaki; Xuesong Lee; Hideki Okamoto; Yasuyuki Sugawara; Shohei Oikawa; Akio Ito; Hiroyuki Okazaki; Takayoshi Yokoya; Akihiko Fujiwara; Yoshihiro Kubozono

doi:10.1063/1.3257373

Low voltage operation in picene thin film field-effect transistor and its physical characteristics

Yumiko Kaji, Naoko Kawasaki, Xuesong Lee, Hideki Okamoto, Yasuyuki Sugawara, Shohei Oikawa, Akio Ito, Hiroyuki Okazaki, Takayoshi Yokoya, Akihiko Fujiwara, Yoshihiro Kubozono

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

Low voltage operation of picene thin film field-effect transistor (FET) has been realized with 40 nm thick SiO₂ gate dielectrics coated by two polymers, Cytop and polystyrene. The picene FETs operated in low absolute gate voltage V_G below 15 V for Cytop coated SiO₂ and 30 V for polystyrene coated SiO₂ gate dielectrics, and they showed a significant O₂ gas sensing effect down to ∼10 ppm. Photoemission spectrum clarified that O₂ molecules penetrate into the thin films at O₂ /picene mole ratio of 1: 1. X-ray diffraction pattern of picene thin films showed highly oriented growth on the polymer-coated SiO₂.

Original language	English
Article number	183302
Journal	Applied Physics Letters
Volume	95
Issue number	18
DOIs	https://doi.org/10.1063/1.3257373
Publication status	Published - 2009

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3257373

Cite this

@article{8b47cf453ccd4d479139ab7bf9d26370,

title = "Low voltage operation in picene thin film field-effect transistor and its physical characteristics",

abstract = "Low voltage operation of picene thin film field-effect transistor (FET) has been realized with 40 nm thick SiO2 gate dielectrics coated by two polymers, Cytop and polystyrene. The picene FETs operated in low absolute gate voltage VG below 15 V for Cytop coated SiO2 and 30 V for polystyrene coated SiO2 gate dielectrics, and they showed a significant O2 gas sensing effect down to ∼10 ppm. Photoemission spectrum clarified that O2 molecules penetrate into the thin films at O2 /picene mole ratio of 1: 1. X-ray diffraction pattern of picene thin films showed highly oriented growth on the polymer-coated SiO2.",

author = "Yumiko Kaji and Naoko Kawasaki and Xuesong Lee and Hideki Okamoto and Yasuyuki Sugawara and Shohei Oikawa and Akio Ito and Hiroyuki Okazaki and Takayoshi Yokoya and Akihiko Fujiwara and Yoshihiro Kubozono",

note = "Funding Information: The photoemission spectrum was measured at Spring-8 under a Proposal 2009A1654. This work was partly supported by a Grant-in-Aid (Grant Nos. 18340104 and 20045012) from MEXT, Japan and Japan Science and Technology Agency. ",

year = "2009",

doi = "10.1063/1.3257373",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "18",

}

TY - JOUR

T1 - Low voltage operation in picene thin film field-effect transistor and its physical characteristics

AU - Kaji, Yumiko

AU - Kawasaki, Naoko

AU - Lee, Xuesong

AU - Okamoto, Hideki

AU - Sugawara, Yasuyuki

AU - Oikawa, Shohei

AU - Ito, Akio

AU - Okazaki, Hiroyuki

AU - Yokoya, Takayoshi

AU - Fujiwara, Akihiko

AU - Kubozono, Yoshihiro

N1 - Funding Information: The photoemission spectrum was measured at Spring-8 under a Proposal 2009A1654. This work was partly supported by a Grant-in-Aid (Grant Nos. 18340104 and 20045012) from MEXT, Japan and Japan Science and Technology Agency.

PY - 2009

Y1 - 2009

N2 - Low voltage operation of picene thin film field-effect transistor (FET) has been realized with 40 nm thick SiO2 gate dielectrics coated by two polymers, Cytop and polystyrene. The picene FETs operated in low absolute gate voltage VG below 15 V for Cytop coated SiO2 and 30 V for polystyrene coated SiO2 gate dielectrics, and they showed a significant O2 gas sensing effect down to ∼10 ppm. Photoemission spectrum clarified that O2 molecules penetrate into the thin films at O2 /picene mole ratio of 1: 1. X-ray diffraction pattern of picene thin films showed highly oriented growth on the polymer-coated SiO2.

AB - Low voltage operation of picene thin film field-effect transistor (FET) has been realized with 40 nm thick SiO2 gate dielectrics coated by two polymers, Cytop and polystyrene. The picene FETs operated in low absolute gate voltage VG below 15 V for Cytop coated SiO2 and 30 V for polystyrene coated SiO2 gate dielectrics, and they showed a significant O2 gas sensing effect down to ∼10 ppm. Photoemission spectrum clarified that O2 molecules penetrate into the thin films at O2 /picene mole ratio of 1: 1. X-ray diffraction pattern of picene thin films showed highly oriented growth on the polymer-coated SiO2.

UR - http://www.scopus.com/inward/record.url?scp=71049168471&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=71049168471&partnerID=8YFLogxK

U2 - 10.1063/1.3257373

DO - 10.1063/1.3257373

M3 - Article

AN - SCOPUS:71049168471

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

M1 - 183302

ER -

Low voltage operation in picene thin film field-effect transistor and its physical characteristics

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this