Magnetoresistance anomalies at level crossing in double layer quantum Hall systems

K. Kodera, A. Endo, K. Kobayashi, S. Katsumoto, Y. Iye

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


We have investigated magnetotransport behavior of a double quantum well system with weak interlayer tunneling. The scaling behavior of the localization property for the Landau levels associated with either layer is in agreement with earlier reports. For the case of Landau level coincidence between the two layers, an anomalous value of the exponent κ≈0.50 is observed. We have observed a peculiar resistance peak at B≃9 T for which the corresponding Hall resistance remains unchanged on both sides of the resistance peak. Hysteretic transition has been found in the region of crossing of the LLs originating from different layers.

Original languageEnglish
Pages (from-to)64-67
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number1-3
Publication statusPublished - Apr 2004
Externally publishedYes
Event15th International Conference on ELectronic Propreties - Nara, Japan
Duration: Jul 14 2003Jul 18 2003


  • Double layer
  • Hysteresis
  • Integer quantum Hall effect
  • Localization

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics


Dive into the research topics of 'Magnetoresistance anomalies at level crossing in double layer quantum Hall systems'. Together they form a unique fingerprint.

Cite this