Measurement of intermodulation distortion in a unitraveling-carrier refracting-facet photodiode and a p-i-n refracting-facet photodiode

T. Ohno; H. Fukano; Y. Muramoto; T. Ishibashi; T. Yoshimatsu; Y. Doi

doi:10.1109/68.986818

Measurement of intermodulation distortion in a unitraveling-carrier refracting-facet photodiode and a p-i-n refracting-facet photodiode

T. Ohno, H. Fukano, Y. Muramoto, T. Ishibashi, T. Yoshimatsu, Y. Doi

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

In this letter, we present an experimental characterization of third-order intermodulation distortion (IM3) at 5.8 GHz in a unitraveling-carrier refracting-facet photodiode (UTC-RFPD) and a p-i-n refracting-facet photodiode (pin-RFPD). The IM3 in the pin-RFPD is considerably reduced compared to the waveguide-type p-i-n photodiode. The third-order intercept point (IP3) of the UTC-RFPD does not decrease as the photocurrent increases, indicating that space-charge-induced nonlinearity is well suppressed in this photodiode. The two-tone IP3 of the UTC-RFPD estimated from the measurement reaches a very high level of 40.5 dBm.

Original language	English
Pages (from-to)	375-377
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	14
Issue number	3
DOIs	https://doi.org/10.1109/68.986818
Publication status	Published - Mar 2002
Externally published	Yes

Keywords

InGaAs
Intermodulation distortion
Nonlinearity
Optical receiver
Photodiode

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/68.986818

Cite this

@article{90c7f381b06f4cde9b819abc39a4ed24,

title = "Measurement of intermodulation distortion in a unitraveling-carrier refracting-facet photodiode and a p-i-n refracting-facet photodiode",

abstract = "In this letter, we present an experimental characterization of third-order intermodulation distortion (IM3) at 5.8 GHz in a unitraveling-carrier refracting-facet photodiode (UTC-RFPD) and a p-i-n refracting-facet photodiode (pin-RFPD). The IM3 in the pin-RFPD is considerably reduced compared to the waveguide-type p-i-n photodiode. The third-order intercept point (IP3) of the UTC-RFPD does not decrease as the photocurrent increases, indicating that space-charge-induced nonlinearity is well suppressed in this photodiode. The two-tone IP3 of the UTC-RFPD estimated from the measurement reaches a very high level of 40.5 dBm.",

keywords = "InGaAs, Intermodulation distortion, Nonlinearity, Optical receiver, Photodiode",

author = "T. Ohno and H. Fukano and Y. Muramoto and T. Ishibashi and T. Yoshimatsu and Y. Doi",

year = "2002",

month = mar,

doi = "10.1109/68.986818",

language = "English",

volume = "14",

pages = "375--377",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Measurement of intermodulation distortion in a unitraveling-carrier refracting-facet photodiode and a p-i-n refracting-facet photodiode

AU - Ohno, T.

AU - Fukano, H.

AU - Muramoto, Y.

AU - Ishibashi, T.

AU - Yoshimatsu, T.

AU - Doi, Y.

PY - 2002/3

Y1 - 2002/3

N2 - In this letter, we present an experimental characterization of third-order intermodulation distortion (IM3) at 5.8 GHz in a unitraveling-carrier refracting-facet photodiode (UTC-RFPD) and a p-i-n refracting-facet photodiode (pin-RFPD). The IM3 in the pin-RFPD is considerably reduced compared to the waveguide-type p-i-n photodiode. The third-order intercept point (IP3) of the UTC-RFPD does not decrease as the photocurrent increases, indicating that space-charge-induced nonlinearity is well suppressed in this photodiode. The two-tone IP3 of the UTC-RFPD estimated from the measurement reaches a very high level of 40.5 dBm.

AB - In this letter, we present an experimental characterization of third-order intermodulation distortion (IM3) at 5.8 GHz in a unitraveling-carrier refracting-facet photodiode (UTC-RFPD) and a p-i-n refracting-facet photodiode (pin-RFPD). The IM3 in the pin-RFPD is considerably reduced compared to the waveguide-type p-i-n photodiode. The third-order intercept point (IP3) of the UTC-RFPD does not decrease as the photocurrent increases, indicating that space-charge-induced nonlinearity is well suppressed in this photodiode. The two-tone IP3 of the UTC-RFPD estimated from the measurement reaches a very high level of 40.5 dBm.

KW - InGaAs

KW - Intermodulation distortion

KW - Nonlinearity

KW - Optical receiver

KW - Photodiode

UR - http://www.scopus.com/inward/record.url?scp=0036503829&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036503829&partnerID=8YFLogxK

U2 - 10.1109/68.986818

DO - 10.1109/68.986818

M3 - Article

AN - SCOPUS:0036503829

SN - 1041-1135

VL - 14

SP - 375

EP - 377

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 3

ER -

Measurement of intermodulation distortion in a unitraveling-carrier refracting-facet photodiode and a p-i-n refracting-facet photodiode

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this